Kyung Hee University · 工学
Professor Hongdoo Kim's research lab specializes in advanced materials development for electronic and biomedical applications, with a strong focus on solution-processed thin-film transistors, dielectric materials, and functional polymers. Key research directions include low-temperature fabrication of high-performance oxide semiconductors—particularly zinc oxide (ZnO) TFTs—using UV-assisted thermal annealing, and the design of novel dielectrics such as ZrO₂ and Al₂O₃ for flexible and plastic electronics. The lab also explores polymer-based materials for bioelectronic applications, including dry electrodes for long-term biosignal monitoring, emphasizing material compatibility, mechanical flexibility, and electrical performance. Additionally, the group investigates molecular-level interactions in polyurethanes and blocked isocyanates for industrial and specialty chemical applications.
Figures are computed from collected data and may differ slightly.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTPolymer diffusion in linear matrixes: polystyrene in tolueneHongdoo Kim, Taihyun Chang, James M. Yohanan, Lixiao Wang, and Hyuk YuCite this: Macromolecules 1986, 19, 11, 2737–2744Publication Date (Print):November 1, 1986Publication History Published online1 May 2002Published inissue 1 November 1986https://pubs.acs.org/doi/10.1021/ma00165a013https://doi.org/10.1021/ma00165a013research-articleACS PublicationsRequest reuse permissionsArticle Views634Altme
Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off-current density of 10-12 A/cm2.
An ultraviolet (UV)-assisted thermal annealing (TA) method is proposed for the rapid fabrication of solution-processed zinc oxide (ZnO) thin-film transistors (TFTs). Conventional thermal treatment of zinc hydroxide solution, which was carried out at 150 °C for 60 min in air, produced ZnO materials. Electrical properties of the TFTs employing thermally-annealed ZnO films were reproduced in the transistors fabricated using a simultaneous thermal treatment combined with UV irradiation at 150 °C for
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTElectrophoretic mobility by electric field modulated forced Rayleigh scatteringHongdoo Kim, Taihyun Chang, and Hyuk YuCite this: J. Phys. Chem. 1984, 88, 18, 3946–3949Publication Date (Print):August 1, 1984Publication History Published online1 May 2002Published inissue 1 August 1984https://pubs.acs.org/doi/10.1021/j150662a014https://doi.org/10.1021/j150662a014research-articleACS PublicationsRequest reuse permissionsArticle Views79Altmetric-Citations17L
Diisocyanates, particularly toluene diisocyanate (TDI), are useful for the preparation of various polyurethanes with specific applications as leather-like materials, adhesives and insoles, etc. Blocking agents can be used for the operational simplicity and to reduce the hazards of TDI. In this paper, we reported the use of 3-(4-bromo-phenyl)-1H-pyrazole to block toluene diisocyanate (TDI). FTIR, NMR, thermogravimetric analysis, contact angle analysis and differential scanning calorimetry (DSC) w
This study aims to find base materials for dry electrode fabrication with high accuracy and without reducing electrode performance for long-term bioelectric potential monitoring after electroless silver plating. Most applications of dry electrodes that have been developed in the past few decades are restricted by low accuracy compared to commercial Ag/AgCl gel electrodes, as in our previous study of PVDF-based dry electrodes. In a recent study, however, nanoweb-based chlorinated polyisoprene (CP
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