Korea Advanced Institute of Science and Technology · 工学
Professor Hyun-Suk Kim's research lab specializes in advanced functional materials and nanostructured devices, with a focus on responsive surfaces, oxide semiconductors for next-generation electronics, and sustainable carbon capture technologies. The lab explores innovative fabrication methods—such as osmotically-driven wrinkling and flow coating—to create hierarchical and patterned nanoarchitectures with applications in tunable optics, high-performance transistors, and flexible optoelectronics. Key research directions include enhancing the stability and performance of amorphous oxide semiconductors, developing environmentally responsive materials for smart devices, and enabling precise control over polymorphous calcium carbonate formation for carbon sequestration. The lab also investigates functional oxide films for integrated photonic and spintronic applications, particularly in magnetically doped oxides with high Faraday rotation and low optical loss.
Figures are computed from collected data and may differ slightly.
Solvent-responsive surfaces are fabricated by osmotically-driven wrinkling with hierarchical morphology and controlled wavelength. By taking advantage of reversible wrinkling mechanisms and controlling the region with moduli-mismatch, we demonstrate several applications such as reversible channels, tunable microlens arrays, and guided colloidal pattern formation.
Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a "dream" display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits
This study examines a sequestration of CO2 using sterically hindered 2-amino 2-(hydroxymethyl)-1,3-propanediol in the presence and absence of the carbonic anhydrase enzyme to obtain a CaCO3 with a polymorphic crystal composition that depended on the pH, temperature, or mole ratio of the reactants in the reaction mixture. The CO2 loading capacity of amine absorbent was 8.5 fold higher than CO2 saturated in water. The amounts of CO2 and CaCO3 precipitated were quantified using ion-selective electr
NAND flash memory is evolving from 2D to 3D structure since 2D NAND flash faced its limitation of size reduction. In this paper, the limitations of 2D planar technology and the development history of 3D NAND flash will be reviewed. Finally, we will discuss the problems to overcome in order to succeed the development of 3D NAND flash.
Multicomponent and robust structures of quantum dots, in the form of stripes and grids, are produced by a simple flow coating method giving unprecedented control over macroscopic architectures from nanoscopic components. Crosslinking and lift-off of stripes lead to free-floating structures of nanoparticles that are flexible, robust, and fluorescent.
Epitaxial films of magnetically doped SrTi1−xFexO3 (x⩽0.5) were grown on (001) LaAlO3 substrates by pulsed laser deposition. Structural and magnetic studies indicate that the observed ferromagnetism is intrinsic rather than from an impurity phase. The higher transparency with Fe doping is attributed to charge compensation resulting from hole doping by Fe incorporation into the SrTiO3 lattice. SrTi0.6Fe0.4O3 has a reasonably high Faraday rotation of 0.078deg∕μm accompanied by low optical loss (0.
In accordance with the fourth industrial revolution (4IR), thin-film all-solid-state batteries (TF-ASSBs) are being revived as the most promising energy source to power small electronic devices. However, current TF-ASSBs still suffer from the perpetual necessity of high-performance battery components. While every component, a series of a TF solid electrolyte (<i>i.e</i>., lithium phosphorus oxynitride (LiPON)) and electrodes (cathode and Li metal anode), has been considered vital, the lack of un
A novel method to design metal oxide thin-film transistor (TFT) devices with high performance and high photostability for next-generation flat-panel displays is reported. Here, we developed bilayer metal oxide TFTs, where the front channel consists of indium-zinc-oxide (IZO) and the back channel material on top of it is hafnium-indium-zinc-oxide (HIZO). Density-of-states (DOS)-based modeling and device simulation were performed in order to determine the optimum thickness ratio within the IZO/HIZ
Abstract Hydrophobic biodegradable polyesters, poly(L‐lactide) (PLLA) and poly(lactide‐ co ‐glycolide) (PLGA), were electrospun on different types of collectors to induce morphological changes in the nanofibrous membrane. On the metal collector smooth nonwoven membranes were obtained for both PLLA and PLGA, while on the water reservoir the surface of the membranes became rough due to shrinkage and slow charge dissipation. When NaCl was added to water to enhance the conductivity, the roughness of
The effect of texture with (100) and (110) preferred orientations on dielectric properties of Ba0.6Sr0.4TiO3 (BST) thin films grown on SrO (9nm) and CeO2 (70nm) buffered Si substrates, respectively, was investigated. The coplanar waveguide (CPW) phase shifter using (100) oriented BST films on SrO buffered Si exhibited a much-enhanced figure of merit of 24.7°∕dB, as compared to that (10.2°∕dB) of a CPW phase shifter using (110) oriented BST films on CeO2 buffered Si at 12GHz. This work demonstrat
Magnetically doped ${\text{SnO}}_{2}$ is a promising dilute magnetic semiconductor and may also be applicable in a variety of magneto-optical applications. Epitaxial films of ${\text{Sn}}_{1\ensuremath{-}x}{\text{Co}}_{x}{\text{O}}_{2}$ $(x\ensuremath{\le}0.2)$ and ${\text{Sn}}_{1\ensuremath{-}x}{\text{Fe}}_{x}{\text{O}}_{2}$ $(x\ensuremath{\le}0.4)$ were grown by pulsed-laser deposition on $R$-plane ${\text{Al}}_{2}{\text{O}}_{3}$ substrates. Structural, magnetic, and magnetotransport measureme
This review aims to provide a technical roadmap and an overview of recent progress in the development of backplane thin film transistors (TFTs) for organic light-emitting diodes flat panel displays and next-generation flexible displays. In the introduction, we provide a general overview of the research trends for backplane TFTs. The main part describes the current technical level and prospects for amorphous metal oxide semiconducting, metal halide perovskites, and 2D transition metal dichalcogen
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