Hyun‐Yong Yu

The difficulty in Schottky barrier height (SBH) control arising from Fermi-level pinning (FLP) at electrical contacts is a bottleneck in designing high-performance nanoscale electronics and optoelectronics based on molybdenum disulfide (MoS₂). For electrical contacts of multilayered MoS₂, the Fermi level on the metal side is strongly pinned near the conduction-band edge of MoS₂, which makes most MoS₂-channel field-effect transistors (MoS₂ FE

Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS₂ phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm

2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface

We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 mum are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These res

We demonstrate an abrupt and box-shaped n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n <sup xmlns:mml="http://www.w3.org/1998/Math/Mat

Electrochemical metallization (ECM) threshold switches are in great demand for various applications such as next-generation logic technology, future memory, and neuromorphic computing. However, the instability of operation due to inherent filamentary randomness is a severe problem that is yet to be solved. Here, we propose a specially treated hafnium oxide (HfO _x:N)-based ECM threshold switch with high reliability, low-voltage operation (0.2 V), high ON/OFF ratio (5 × 10⁸),

Schottky barrier height (SBH) engineering of contact structures is a primary challenge to achieve high performance in nanoelectronic and optoelectronic applications. Although SBH can be lowered through various Fermi-level (FL) unpinning techniques, such as a metal/interlayer/semiconductor (MIS) structure, the room for contact metal adoption is too narrow because the work function of contact metals should be near the conduction band edge (CBE) of the semiconductor to achieve low SBH. Here, we pro

With the significant technological developments in recent times, the neuromorphic system has been receiving considerable attention owing to its parallel arithmetic, low power consumption, and high scalability. However, the low reliability of artificial synapse devices disturbs calculations and causes inaccurate results in neuromorphic systems. In this paper, we propose a stable resistive artificial synapse (RAS) device with nitrogen-doped titanium oxide (TiO_<i>x</i>:N)-based resistive

Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4×106 cm−2 and low surface roughness of

Abstract Neural networks composed of artificial neurons and synapses mimicking the human nervous system have received much attention because of their promising potential in future computing systems. In particular, spiking neural networks (SNNs), which are faster and more energy‐efficient than conventional artificial neural networks, have recently been the focus of attention. However, because typical neural devices for SNNs are based on complementary metal‐oxide‐semiconductors that exhibit high c

Although molybdenum disulfide (MoS₂) is highlighted as a promising channel material, MoS₂-based field-effect transistors (FETs) have a large threshold voltage hysteresis (Δ V_TH) from interface traps at their gate interfaces. In this work, the Δ V_TH of MoS₂ FETs is significantly reduced by inserting a 3-aminopropyltriethoxysilane (APTES) passivation layer at the MoS₂/SiO₂ gate interface owing to passivation of the interf

Presently, the 3-terminal artificial synapse device has been in focus for neuromorphic computing systems owing to its excellent weight controllability. Here, an artificial synapse device based on the 3-terminal solid-state electrolyte-gated transistor is proposed to achieve outstanding synaptic characteristics with a human-like mechanism at low power. Novel synaptic characteristics are accomplished by precisely tuning the threshold voltage using the proton-electron coupling effect, which is caus

In this study, we proposed germanium (Ge) metal-interlayer-semiconductor-metal (MISM) photodiodes (PD), with an anode of a metal-interlayer-semiconductor (MIS) contact and a cathode of a metal-semiconductor (MS) contact, to efficiently suppress the dark current of Ge PD. We selected titanium dioxide (TiO₂) as an interlayer material for the MIS contact, due to its large valence band offset and negative conduction band offset to Ge. We significantly suppress the dark current of Ge PD by