Jaehoon Lim
Sungkyunkwan University 화학공학과 · 材料科学
이 교수의 연구실은 고성능 및 안정성 있는 인산 인듐(Indium Phosphide, InP) 기반 양자점 발광 다이오드(QLED)의 개발에 초점을 맞추고 있습니다. 특히 전하 운반자 균형 향상과 비방사 재결합 억제를 위한 표면 및 계면 구조 최적화, 그리고 내열성·내광성 구조를 갖춘 계층적 코팅(예: InP@ZnSeS)을 통해 높은 발광 효율과 장수명을 실현하고자 합니다. 또한, 유해 중금속을 포함하지 않는 친환경 양자점 소재의 설계와 프린팅 공정 기반의 풀컬러 디스플레이 실현 기술도 핵심 연구 분야입니다.
Figures are computed from collected data and may differ slightly.
We demonstrate bright, efficient, and environmentally benign InP quantum dot (QD)-based light-emitting diodes (QLEDs) through the direct charge carrier injection into QDs and the efficient radiative exciton recombination within QDs. The direct exciton formation within QDs is facilitated by an adoption of a solution-processed, thin conjugated polyelectrolyte layer, which reduces the electron injection barrier between cathode and QDs via vacuum level shift and promotes the charge carrier balance w
CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.
Utilizing the reactivity difference between TOPSe and TOPS, we synthesized InP@ZnSeS QDs with the composition gradient in a radial direction where ZnSe alleviated lattice strain and ZnS protected QDs from degradation so that we achieved QDs with high QE and photo/chemical stability. In terms of systematic investigation on the relationship between the shell nanostructure and QD stability, we demonstrated that QDs with thick gradient shells exhibited high QE and much enhanced stability against the
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