Sungkyunkwan University · 材料科学
Professor Jin-Hyo Boo's research lab specializes in the epitaxial growth and thin film fabrication of advanced semiconductor materials for next-generation electronic and optoelectronic applications. The lab focuses on developing high-quality, single-crystalline or highly oriented III-nitride (e.g., GaN, AlN), silicon carbide (SiC), and transition metal oxide (e.g., VO₂) films using advanced chemical vapor deposition techniques such as LP-OMCVD, MOCVD, and PECVD. Key research directions include buffer layer engineering for lattice-matched epitaxial growth, low-temperature synthesis of wide-bandgap semiconductors, and enhancement of optical and electrical properties through surface passivation and nanostructure control. The lab's work aims to enable scalable, high-performance devices for power electronics, transparent conductive oxides, and smart thermochromic windows.
Figures are computed from collected data and may differ slightly.
Highly oriented polycrystalline h-BN thin films were deposited on silicon substrates in the temperature range of 600–900°C from the single molecular precursor of borane–triethylamine complex, (C2H5)3N : BH3, by supersonic jet assisted chemical vapor deposition. Hydrogen was used as carrier gas, and additional nitrogen was supplied by either ammonia through a nozzle or nitrogen via a remote microwave plasma. Hexagonal GaN films were also grown on Si(1 0 0) with h-BN buffer layers at temperatures
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