Jong Kyu Kim

Abstract About twenty years ago, in the autumn of 1996, the first white light‐emitting diodes (LEDs) were offered for sale. These then‐new devices ushered in a new era in lighting by displacing lower‐efficiency conventional light sources including Edison's venerable incandescent lamp as well as the Hg‐discharge‐based fluorescent lamp. We review the history of the conception, improvement, and commercialization of the white LED. Early models of white LEDs already exceeded the efficiency of low‐wat

Abstract Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride‐based light‐emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research, as it retards the advancement of solid‐state lighting which is just starting to supplant fluorescent as well as incandescent lighting. Although the technical community does not yet have consented to a single cause of droop, this article provides a summary of the present state of droop research, re

Enhancement of phosphor efficiency is reported for GaInN-based white light-emitting diodes (LEDs) employing a large separation between the primary LED emitter and the wavelength converter, and a diffuse reflector cup. Ray-tracing simulations show that extraction efficiency of wavelength-converted light is enhanced by 75%. The experimental improvement in phosphor efficiency of blue-pumped yellow phosphor is 15.4% compared with conventional phosphor-based white LEDs. The improvement is attributed

Ohmic contact to p-type GaN with the lowest contact resistivity was developed by the surface treatment prior to Pd/Au metal deposition. The contact resistivity drastically decreased from 2.9×10−2 to 4.3×10−4 Ω cm2 by the surface treatment using aqua regia. The surface treatment plays a role in removing the surface oxide formed on p-type GaN during epitaxial growth, and subsequently in reducing the barrier height for holes at the interface of Pd/p-type GaN, resulting in the good ohmic contacts to

The field of photonics starts with the efficient generation of light. The generation of efficient yet highly controllable light can indeed be accomplished with light-emitting diodes (LEDs), which are, in principle, capable of generating white light with a 20 times greater efficiency than conventional light bulbs. Deployed on a global scale to replace conventional sources, such solid-state light sources will result in enormous benefits that, over a period of 10 years, include (1) gigantic energy

Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN∕low-n ITO/Ag O

A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO2 ohmic contact to p-type GaN, a quarter-wave thick SiO2 low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at λ=450 nm for an GaN/SiO2/Ag ODR, much higher than that for a 20 period Al0.25Ga0.75N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO2/SiO2/Ag ODR ha

We present high performance gas sensors based on an array of near single crystalline TiO(2) nanohelices fabricated by rotating oblique angle deposition (OAD). The combination of large surface-to-volume ratio, extremely small size (<30 nm) comparable to the Debye length, a near single crystallinity of TiO(2) nanohelices, together with the unique top-and-bottom electrode configuration hugely improves the H(2)-sensing performance, including ∼10 times higher response at 50 ppm, approximately a facto

A method for enhancing the light-extraction efficiency of GaInN light-emitting diodes (LEDs) by complete elimination of total internal reflection is reported. Analytical calculations show that GaInN LEDs with multilayer graded-refractive-index pillars, in which the thickness and refractive index of each layer are optimized, have no total internal reflection. This results in a remarkable improvement in light-extraction efficiency. GaInN LEDs with five-layer graded-refractive-index pillars, fabric