Jong‐Soo Rhyee

Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.

Considerable efforts have been devoted to enhancing thermoelectric performance, by employing phonon scattering from nanostructural architecture, and material design using phonon-glass and electron-crystal concepts. The nanostructural approach helps to lower thermal conductivity but has limited effect on the power factor. Here, we demonstrate selective charge Anderson localization as a route to maximize the Seebeck coefficient while simultaneously preserving high electrical conductivity and lower

The state-of-the-art record of thermo­electric figure-of-merit (ZT) of 1.53 at 425 °C is achieved by chlorine doping in In4Se3–xCl0.03 bulk crystalline materials as used for n-type thermoelectric energy harvesting. The low-dimensional property imparted by chlorine doping significantly increases the electrical conductivity and reduces the thermal conductivity resulting in a high power factor over a wide temperature range.

We report the high thermoelectric figure-of-merit (ZT) on the Se-deficient polycrystalline compounds of In4Se3−x (0.02≤x≤0.5) and the anisotropic electronic band structure. The Se-deficiency (x) has the effect of decreasing the semiconducting band gap and increasing the power factor. The band structure calculation for In4Se3−x (x=0.25) exhibits localized hole bands at the Γ-point and Y-S symmetry line, whereas the significant electronic band dispersion is observed along the c-axis. Here, we prop

We investigated the thermoelectric properties and electronic band structure calculation of Sn_1−xAg_xTe and Sn_1.03−xAg_xTe (<italic>x</italic> = 1, 3, 5, 7 mol%) compounds.

We investigate the thermoelectric properties of (CuI)_0.003Bi₂Te_2.7Se_0.3/Mo (Mo: 0.0, 0.9, 1.3, 1.8, 3.1, and 4.3 vol %) composites, which were synthesized by extrinsic phase mixing with hot press sintering. From X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDX) measurements, we confirm that micro-sized Mo particles are dispersed homogeneously in the (CuI)_0.003Bi₂Te_2.7Se_0.3 matrix without

Sb₂Te₃/Ag₂Te (ST/AT) composites with ST/AT molar ratios of 1/1, 2/1, 4/1, 8/1, 16/1, and 32/1 were synthesized, and high <italic>ZT</italic> values were achieved compared with other Pb-free p-type chalcogenide thermoelectric materials.

We present thermoelectric properties and electronic structure of the series compounds of In4Se3−xTex (0.0≤x≤3.0). Even if the Te-doping is an isoelectronic substitution, we found that the electron dominated carrier transport in Se-rich region (x≤0.2) evolves into the electron-hole bipolar transport properties in Te-rich region (x≥2.5) from the temperature-dependent thermal conductivity κ(T), Seebeck coefficient S(T), and Hall coefficient RH(T) measurements. The electronic band structures of In4S

Bi₂Te₃-based compounds have long been studied as thermoelectric materials in cooling applications near room temperature. Here, we investigated the thermoelectric properties of CuI-doped Bi₂Te_2.1Se_0.9 compounds. The Cu/I codoping induces the lattice distortion partially in the matrix. We report that the charge density wave caused by the local lattice distortion affects the electrical and thermal transport properties. From the high-temperature