東京大学 · 工学
K. Shiba教授の研究室は、次世代核融合炉向け高耐久鋼の開発と、3Dスタックド半導体デバイスにおける高効率無線インターフェース技術の両輪で進める先端材料・デバイス統合研究を行っています。F82H鋼の合金設計による靭性向上と放射線劣化特性の向上、および3D SRAMにおけるTSVに代わるインダクティブ結合方式による低消費電力・高密度接続技術の確立が主な研究テーマです。特に、ナノスケールの磁気結合と信号処理技術の融合により、大容量かつ低遅延な次世代メモリアーキテクチャの実現を目指しています。
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A toughness-improved type of F82H steel called F82H mod3 has been developed, and the material properties and irradiation behavior have been examined. The significant modification of the chemical composition is the reduction of Ti (<10 ppm) and N (<20 ppm) as impurities and the increase of Ta (0.1%) as an alloying element. The ductile-to-brittle transition temperature (DBTT) is improved to -90°C from -45°C for F82H IEA without change in strength. However, the creep rupture time of F
A 28.8-GB/s 96-MB 3D-stacked SRAM is presented. A total of eight SRAM dies, designed in a 40-nm CMOS process, are vertically stacked and connected using an inductive coupling wireless link with a low-voltage NMOS push-pull transmitter that reduces the power of the link by 35% with a 0.4-V power supply. The SRAM utilizes an inverted bit insertion scheme that compensates for the degradation of the first transmitted bit, a coil termination scheme that aims to eliminate the ringing of 3D inductive c
A 0.7-pJ/bit, 8.5-Gb/s/link inductive coupling interchip wireless communication interface for a 3D- stacked static-random access memory (SRAM) has been developed in a 7-nm FinFET process. A new physical placement method that allows coils to be placed over off-the-shelf SRAM macros with small magnetic field attenuation, together with the use of synchronous communication using Manchester encoding and a clocked comparator to enable the detection of small-swing signals, achieves a 26% reduction in S
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