Yonsei University · 工学
Professor Keehoon Kang's research lab specializes in the development and fundamental understanding of advanced 2D and solution-processed semiconductor materials for next-generation electronic and optoelectronic devices. Key research directions include molecular doping in organic and hybrid perovskite semiconductors, charge transport engineering in 2D transition metal dichalcogenides (TMDCs), and the optimization of metal halide perovskites for thermoelectric and photovoltaic applications. The lab also explores novel device architectures such as ambipolar transistors and multispectral sensors for real-world applications like counterfeit detection. Their work emphasizes the interplay between material properties, doping mechanisms, and device performance to enable high-efficiency, low-cost electronic systems.
Figures are computed from collected data and may differ slightly.
Recently there has been growing interest in avalanche multiplication in two-dimensional (2D) materials and device applications such as avalanche photodetectors and transistors. Previous studies have mainly utilized unipolar semiconductors as the active material and focused on developing high-performance devices. However, fundamental analysis of the multiplication process, particularly in ambipolar materials, is required to establish high-performance electronic devices and emerging architectures.
Abstract Molecular doping of organic semiconductors has been widely utilized to modulate the charge transport characteristics and charge carrier concentration of active materials for organic electronics such as organic photovoltaics, organic light-emitting diodes, and organic field-effect transistors. For the application of molecular doping to organic electronics, the fundamentals of molecular doping should be thoroughly understood in terms of doping mechanism, host and dopant materials, doping
Abstract Over the past decade, metal halide perovskites (MHPs) have received great attention, triggered by the tremendous success of their record‐breaking power conversion efficiency values in solar cells. Recently, there have been significant interests in fully utilizing their unique properties by exploring other device applications including thermoelectrics, which is promising due to their ultralow thermal conductivity and high mobility relative to their competitors among solution‐processable
Tin (Sn) halide perovskites are promising materials for various electronic applications due to their favorable properties. However, facile interaction with atmospheric oxygen (O2) often hinders the practical use of Sn-based perovskites, which is regarded as a major cause of undesired variations in their electrical and structural properties. Herein, we report the reversible p-doping in phenethylammonium tin iodide ((PEA)2SnI4) transistors when they are exposed sequentially to ambient and vacuum c
With advancement of sensor technologies, it is now possible to manufacture cost-effective multispectral sensors for ATM (automatic teller machine). Using multispectral images, one can better cope with counterfeit banknote problems. In this paper, we propose a counterfeit banknote detection using multispectral images in visual and infrared spectrum. In the proposed method, we divided a banknote into a number of blocks and extracted features from the blocks. To reduce processing time for real-time
2D transition metal dichalcogenides (TMDCs) have revealed great promise for realizing electronics at the nanoscale. Despite significant interests that have emerged for their thermoelectric applications due to their predicted high thermoelectric figure of merit, suitable doping methods to improve and optimize the thermoelectric power factor of TMDCs have not been studied extensively. In this respect, molecular charge-transfer doping is utilized effectively in TMDC-based nanoelectronic devices due
Nonvolatile memory devices based on unipolar resistive switching in a solution-processed organo-metal halide perovskite are reported by Keehoon Kang, Takhee Lee, and co-workers in article number 1804841. A facile synthesis of the perovskite layer with a nonhalide precursor allows the reliable fabrication of high-yield cross-bar array memory devices with a desirable ON/OFF ratio and electrical stability, which can potentially open a solution-processing route for realizing high-density resistive r
The field of perovskite optoelectronics and electronics has rapidly advanced, driven by excellent material properties and a diverse range of fabrication methods available. Among them, triple-cation perovskites such as CsFAMAPbI<sub>3</sub> offer enhanced stability and superior performance, making them ideal candidates for advanced applications. However, the multicomponent nature of these perovskites introduces complexity, particularly in how their structural, optical, and electrical properties a
Open papers in the app to read, cite, and organize with AI.
