Korea Advanced Institute of Science and Technology · 物理学・天文学
Professor Kyung-Jin Lee's research lab specializes in spintronics and nanomagnetic devices, focusing on current-induced magnetic phenomena such as spin-transfer torque switching and magnetization dynamics in nano-scale structures. The lab investigates the fundamental mechanisms of voltage- and current-driven resistance switching in solid electrolyte memories, with particular emphasis on the formation and evolution of nanoscale conducting filaments. Using advanced in situ characterization techniques like transmission electron microscopy, the lab combines theoretical modeling with experimental validation to explore next-generation magnetic and resistive memory technologies. Their work bridges the gap between nanoscale physics and practical device applications in non-volatile memory and low-power electronics.
Figures are computed from collected data and may differ slightly.
We studied current-induced magnetic switching and excitations in structures comprising a free layer with in-plane magnetization traversed by a current with perpendicular-to-plane spin polarization. We derived analytical solutions from the Landau–Lifshitz–Gilbert equation including the spin-torque term, and compared them to numerical simulations within the single domain assumption. Taking into account the criterion of thermal stability, the magnetization switching in nanostructures of typical siz
Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing. Detailed facts of importance to s
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