Min Sup Choi

This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10(10) Jones, and light switching ratio of ∼10(3)) and ideal rectifying behavior. The enhanced photoresponse and generation of open-circuit voltage (VOC)

An unconventional phase-change memory (PCM) made of In₂ Se₃ , which utilizes reversible phase changes between a low-resistance crystalline β phase and a high-resistance crystalline γ phase is reported for the first time. Using a PCM with a layered crystalline film exfoliated from In₂ Se₃ crystals on a graphene bottom electrode, it is shown that SET/RESET programmed states form via the formation/annihilation of periodic van der Waals' (vdW) gaps (i.e.,

Graphene formed via chemical vapor deposition was exposed to various plasmas (Ar, O2, N2, and H2) in order to examine its effects on the bonding properties of graphene to metal. After exposing patterned graphene to Ar plasma, the subsequently deposited metal electrodes remained intact, enabling the successful fabrication of field effect transistor arrays. The effects of the enhanced adhesion between graphene and metals were more evident from the O2 plasma than the Ar, N2, and H2 plasmas, suggest

Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R_C ), thereby substantially lowering th

The development of a controllable, selective, and repeatable etch process is crucial for controlling the layer thickness and patterning of two-dimensional (2D) materials. However, the atomically thin dimensions and high structural similarity of different 2D materials make it difficult to adapt conventional thin-film etch processes. In this work, we propose a selective, damage-free atomic layer etch (ALE) that enables layer-by-layer removal of monolayer WSe₂ without altering the physic

Abstract Doping is a key technique for forming complementary metal‐oxide‐semiconductor (CMOS) that is a basic building block for current state‐of‐the‐art semiconductor devices. However, conventional doping methods such as ion implantation are unsuitable for 2D materials due to their ultra‐thinness to accommodate substitutionally doped atomic structures and vulnerability to high energy ion bombardment. Chemical doping methods have been widely used for 2D materials to induce a charge exchange tran

Achieving low contact resistance (R_C ) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS₂ devices are systematically analyzed as a function of top and bottom gate-voltages (V_TG and V_BG ). The semimetal contacts not only significantly reduce R_C but also induce a strong dependence of R_C on V<

Polycrystalline silicon films are used throughout the semiconductor industry in the fabrication of both metaloxide-semiconductor (MOS) and bipolar products. For example, in MOS products, doped polysilicon is used for gate and interconnection materials. In bipolar products, polysilicon is used for device isolation, passive resistors, or active base elements. While these films are usually used with different ranges of doping, stress measurement of doped polysilicon is not well reported. Earlier re

The surface oxidation of 2D transition metal dichalcogenides (TMDs) has recently gained tremendous technological and fundamental interest owing to the multi-functional properties that the surface oxidized layer opens up. In particular, when integrated into other 2D materials in the form of van der Waals heterostructures, oxidized TMDs enable designer properties, including novel electronic states, engineered light-matter interactions, and exceptional-point singularities, among many others. Here,

The potential of 2D materials in future CMOS technology is hindered by the lack of high-performance p-type field effect transistors (p-FETs). While utilization of the top-gate (TG) structure with a p-doped spacer area offers a solution to this challenge, the design and device processing to form gate stacks pose serious challenges in realization of ideal p-FETs and PMOS inverters. This study presents a novel approach to address these challenges by fabricating lateral p⁺-p-p⁺

In two-dimensional (2D) nanomaterial electronics, vertical field-effect transistors (VFETs), where charges flow perpendicular to the channel materials, hold promise due to the ease of forming ultrashort channel lengths by utilizing the thinness of 2D materials. However, the poor performance of p-type VFET arises from the lack of a gate-field-penetrating electrode with suitable work functions, which is essential for VFET operation. This motivated us to replace graphene (work function of ∼4.5 eV)

Vertical field effect transistors (VFETs) based on two-dimensional materials offer exceptional potential for next-generation electronic devices due to their atomically thin channels and scalability. However, achieving high-performance p-type VFETs (p-VFETs) presents substantial challenges, as these devices often face limitations in hole transport efficiency, leakage current suppression, and attainment of high on/off current ratios. This study introduces an ultrashort channel length (less than 3.