Yonsei University · 工学
Professor Moo Whan Shin's research lab specializes in advanced semiconductor devices and energy storage systems, with a strong focus on gallium nitride (GaN)-based high-power electronics and lithium-air batteries. The lab investigates microwave GaN HEMTs for high-power and high-temperature applications, leveraging advanced simulation and characterization techniques to optimize device performance. In parallel, the lab explores novel nanomaterials for energy conversion and storage, particularly cobalt-based porous carbon composites for efficient air cathodes in lithium-air batteries. The integration of materials engineering with device physics enables the development of next-generation electronic and electrochemical systems.
Figures are computed from collected data and may differ slightly.
The potential of microwave GaN MESFETs is evaluated using a harmonic-balance RF simulator for high-power and high-temperature applications. The simulated device performance (DC I/V characteristics and small-signal power gain) of a GaN FET is in good agreement with experimental data. It is demonstrated that the excellent electrical properties of GaN make it a viable alternative to SiC for microwave high-power and high-temperature applications.
This paper reports on the experimental methods of the determination of junction temperature and thermal resistance in GaN-based LEDs. For the direct temperature measurement and investigation of thermal distribution on the operating LED chip, nematic liquid crystal thermographic technique was employed. Hot spot was observed and its size was increasing with the driving input power. The initial hot spot with an anisotropic–isotropic transition of 29 °C appeared near the cathode region under the dri
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