Myung‐Gil Kim

Abstract The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability of perovskite-based transistors do not yet match their n-type counterparts, which limit their broader application. Here we report high-performance p-channel perovskite thin-film t

Films of the high-performance solution-processed amorphous oxide semiconductor a-ZnIn(4)Sn(4)O(15), grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate thin-film transistors (TFTs) in combination with an organic self-assembled nanodielectric as the gate insulator. This structurally dense-packed semiconductor composition with minimal Zn(2+) incorporation strongly suppresses transistor off-currents without significant mobility degradation, and affords field-effect electron m

Here, room-temperature solution-processed inorganic p-type copper iodide (CuI) thin-film transistors (TFTs) are reported for the first time. The spin-coated 5 nm thick CuI film has average hole mobility (µ_FE ) of 0.44 cm² V^-1 s^-1 and on/off current ratio of 5 × 10² . Furthermore, µ_FE increases to 1.93 cm² V^-1 s^-1 and operating voltage significantly reduces from 60 to 5 V by using a high permittivit

'Ideal' transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solu

A stretchable transparent electrode was achieved with rationally-controlled ultra-long copper nanowires and low-temperature direct spray coating.

Abstract The effect of 5 MeV high‐energy proton irradiation on solution‐processed metal‐oxide thin‐film transistors (TFTs) is investigated. The electrical characteristics of the devices are measured before and after proton irradiation with radiation doses of 10 13 , 10 14 , and 10 15 cm −2 . TFTs based on zinc oxide (ZnO) and amorphous indium gallium zinc oxide ( a ‐IGZO) exhibit a significant negative shift in their threshold voltage values (Δ V th ≤ −30 V) or transitioned to the conductor stat

The first example of an n-type [1]benzothieno[3,2-b][1]benzothiophene (BTBT)-based semiconductor, D(PhFCO)-BTBT, has been realized via a two-step transition-metal-free process without using chromatographic purification. Physicochemical and optoelectronic characterizations of the new semiconductor were performed in detail, and the crystal structure was accessed. The new molecule exhibits a large optical band gap (∼2.9 eV) and highly stabilized (ΔELUMO = 1.54 eV)/π-delocalized lowest unoccupied mo

Delayed ignition of combustion synthesis precursors can significantly lower metal oxide film formation temperatures. From bulk In(2)O(3) precursor analysis, it is shown here that ignition temperatures can be lowered by as much as 150 °C. Thus, heat generation from ~60 nm thick In(2)O(3) films is sufficient to form crystalline In(2)O(3) films at 150 °C. Furthermore, we show that the low processing temperatures of sufficiently thick combustion precursor films can be applied to the synthesis of met

We report a general strategy for obtaining high-quality, large-area metal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels, which are easily transformed into the corresponding high-performance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQ _<i>x</i> : M = Zn, Cd, I

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In

Abstract Appreciable advancement of low‐temperature combustion processing brings a step closer to the fulfillment of large‐area, flexible electronics. The maximum temperature of deposition is successfully reduced below the softening temperature of the polymeric substrates. The method embodies the incorporation of fuel‐ and oxidizer‐ligands in the precursor, which leads to an exothermic reaction resulting in low‐temperature conversion and/or densification of the metal oxide thin films. A series o

Abstract Quantum dot (QD) light‐emitting diodes have been intensively investigated as a future display technology owing to their outstanding optoelectronic properties such as narrow spectral bandwidths and high quantum efficiencies. Significant efforts have been made to achieve full color QD light‐emitting diodes (QLEDs) by applying various fine‐patterning technologies to active QD layers. However, the reported patterning methods generally require high processing cost and complex facilities whic