名古屋大学 · 工学
Usami教授の研究室では、半導体ナノ構造のエpitaxial成長とそのエレクトロニクス的・光エレクトロニクス的応用を主軸に、SiGe量子ワイヤーの精密な構造制御とその光学特性の解明を進めています。特にVグローブパターン上でのガス源分子線エpitaxy技術を応用し、ナノスケールの自己組織的成長とその界面制御を追求しています。また、結晶成長におけるキログレイン境界と不純度欠陻の関係についても、実験とシミュレーションの融合的アプローチで解明を進めています。
Figures are computed from collected data and may differ slightly.
We report on the successful fabrication of SiGe quantum wire structures on a V-groove patterned substrate by gas-source selective epitaxial growth technique, and their optical properties. Optical anisotropy, showing the realization of luminescent SiGe layers with wire geometry, was clearly observed in electroluminescence from the SiGe layers grown inside the groove.
SiGe/Si quantum wire structures were successfully fabricated on a V-groove patterned Si substrate by using gas-source Si molecular beam epitaxy (GS-SiMBE). A cross sectional image of transmission electron microscope clarified a crescent-shaped SiGe layer at the bottom of the V-groove owing to anisotropy of the growth rate on the different crystal orientations in GS-SiMBE.
We attempted to clarify relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth. Systematic variation of grain boundary structures was realized by employing dendritic nucleation at the initial stage of crystal growth. Etch-pit observation revealed that the contact angle of adjacent dendrite crystals to form a grain boundary affects generation of dislocations. Experimentally observed dislocation density was found to be well correlate
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