Ryota Katsumi

Photonic integrated circuits (PICs) are attractive platforms to perform large-scale quantum information processing. While highly-functional PICs (e.g. silicon based photonic-circuits) and high-performance single photon sources (SPSs, e.g. compound-semiconductor quantum dots (QDs)) have been independently demonstrated, their combination for single-photon-based applications has still been limited. This is largely due to the complexities of introducing SPSs into existing PIC platforms, which are ge

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs) because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum li

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However,

Point defects in diamond, particularly nitrogen-vacancy (NV) centers, have emerged as powerful tools for a broad range of quantum technologies. These defects are promising candidates for quantum information science, serving as deterministic single-photon sources and solid-state quantum memories. They have also been employed as nanoscale quantum sensors to detect various physical quantities, including magnetic fields, electric fields, and temperature, owing to their long spin coherence time at ro

We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing, and

Abstract We report the hybrid integration of a telecom band InAs/InP quantum-dot (QD) single-photon source on a CMOS-processed Si photonics chip using transfer printing. The integration technique allows for the assembly of photonic components in a pick-and-place operation and therefore can introduce them on Si photonics chips after completing the entire CMOS-compatible fabrication processes. We demonstrate telecom single-photon generation from an InAs/InP QD integrated on Si and its coupling int

Abstract The ensemble of nitrogen-vacancy (NV) centers in diamond allows for the potential realization of the sensitive magnetometers by leveraging their excellent spin properties. However, the NV-based magnetometers are limited by their experimental magnetic field sensitivity owing to its inefficient photon collection. Moreover, they are a disadvantage to the reduced spatial resolution and excessive excitation power. To overcome these issues, we propose a ultra-sensitive diamond magnetometer ba

Nitrogen-vacancy centers have demonstrated significant potential as quantum magnetometers for nanoscale phenomena and sensitive field detection, attributed to their exceptional spin coherence at room temperature. However, it is challenging to achieve solid-state magnetometers that can simultaneously possess high spatial resolution and high field sensitivity. Here we demonstrate nanoscale quantum sensing with high field sensitivity by using on-chip diamond micro-ring resonators. The ring resonato

Incorporating color centers in diamond with mature integrated photonics using hybrid integration techniques such as transfer printing provides a promising route toward scalable quantum applications. However, single-crystal diamond nanostructures fabricated using current etching technologies have triangular bottoms that are unsuitable for conventional pick-and-place integration. Herein, we present an alternative approach for deterministically integrating diamond nanostructures on chip. We demonst

Abstract Silicon photonics is promising for quantum photonics applications owing to its large‐scale and high‐performance circuitry enabled by complementary‐metal‐oxide‐semiconductor fabrication processes. However, there is a lack of bright single‐photon sources (SPSs) capable of deterministic operation on Si platforms, which largely limits their applications. To this end, on‐Si integration of high‐performance solid‐state quantum emitters, such as semiconductor quantum dots (QDs), is greatly desi

Negatively charged nitrogen-vacancy (NV) centers in diamond have emerged as promising candidates for a wide range of quantum applications, especially quantum sensing of magnetic field. Implementation of nanostructure into diamond is powerful for efficient photon collection of NV centers and chip-scale miniaturization of the device, which is crucial for sensitive and practical diamond magnetometers. However, fabrication of the diamond nanostructure involves technical limitations and can degrade t

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs), because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum l

We report a quantum-dot single-photon source integrated onto a CMOS-processed silicon waveguide. The necessary hybrid integration was done in a simple pick-and-place manner with transfer printing, thus fully maintaining the compatibility with CMOS-back-end technology.