Korea Advanced Institute of Science and Technology · 工学
Professor Sanghyeon Kim's research lab specializes in advanced semiconductor materials and devices, with a focus on next-generation transistors and energy storage systems. The lab pioneers the development of III-V compound semiconductor-based MOSFETs—particularly InGaAs and InAs on insulator—using innovative structures like tri-gate and silicide-like metal source/drain integration to achieve ultra-scaled, high-performance devices. It also explores novel electrode architectures for lithium-ion batteries, such as Al₂O₃-coated FeF₂, to enhance stability and kinetics. The lab combines advanced fabrication techniques, including wafer bonding, epitaxial lift-off, and atomic layer deposition, to enable high-quality, III-V-on-Si heterostructures for integrated electronics and optoelectronics.
Figures are computed from collected data and may differ slightly.
This molecular level analysis suggests that diagnostic specific genes predominate to shared genes in common among suicide vs. non-suicide groups. These differentially expressed, candidate genes are neural correlates of suicide, not necessarily causal. While suicide is a complex endpoint with many pathways, these candidate genes provide entry points for future studies of molecular mechanisms and genetic association studies to test causality.
We have investigated the effects of the tri-gate channel structure on electrical properties of extremely thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that the tri-gate structure provides significant improvement in short channel effect (SCE) control even in ETB-OI MOSFETs by the simulation. We have fabricated and demonstrated tri-gate InAsOI MOSFETs with fin width of the top surface down to 40 nm. The tri-gate ETB InAs-OI MOSFETs shows better SCEs control with small effective mob
FeF 2 is considered a promising conversion compound for the positive electrode in lithium‐ion batteries due to its high thermodynamic reduction potential (2.66 V vs Li/Li + ) and high theoretical specific capacity (571 mA h g −1 ). However, the sluggish reaction kinetics and rapid capacity decay caused by side reactions during cycling limit its practical application. Here, the fabrication of Ni‐supported 3D Al 2 O 3 ‐coated FeF 2 electrodes is presented, and it is shown that these structured ele
We report that a Ni–InGaAs alloy can be used as a source/drain (S/D) metal for InGaAs metal–oxide–semiconductor field-effect transistors (MOSFETs), allowing us to employ the salicide-like self-align S/D formation. We also introduce Schottky barrier height (SBH) engineering process by increasing the indium content of InxGa1-xAs channels, which successfully reduces SBH down to zero. We propose a fabrication process for self-aligned metal S/D MOSFETs using Ni–InGaAs and demonstrate successful opera
We report on fabrication and characterization of high-quality 32 × 32 GaAs photodetector (PD) arrays on Si substrates fabricated by wafer bonding and epitaxial lift-off (ELO) techniques. Fabricated GaAs PD arrays showed good crystal quality on Si substrates with Raman spectra and X-ray diffraction measurement. Also, pitch scaling gave us faster ELO process time as well as high-density PD arrays. Furthermore, we investigated electrical and optical characteristics of fabricated GaAs pin PD arrays
We report the operation of sub-60-nm deeply scaled InGaAs- and InAs-on-insulator (-OI) MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). InAs-OI MOSFETs provide 400% Ion enhancement, compared with an In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As control device with the sa
We have systematically analyzed the components of source/drain (S/D) resistance (RSD) in InGaAs n-MOSFETs with Ni-InGaAs metal S/D. It is found that Ni-InGaAs has a low resistivity of ~250 μΩ·cm in a thickness of Ni-InGaAs (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ni-InGaAs</sub> ) of down to ~4 nm. Contact resistance between the contact pads and Ni-InGaAs (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org
We propose a new Ge waveguide platform on Si substrates using F- and Y-based insulator cladding such as CaF2 and Y2O3 , which have a small refractive index, broad transparency range, and high thermal conductivity. First, we verified the platform by optical mode simulation, showing that Mid-infrared (MID-IR) light is well confined in the proposed Ge waveguide due to the large differences in the refractive indexes of Ge and the insulators. We also investigated the thermal aspects of the platform i
The honey bee acetylcholinesterase 1 (AmAChE1) has been suggested to be related to stress response as judged from its elevated expression level under brood rearing-suppressed conditions. To further investigate the involvement of AmAChE1 expression in the stress response and its physiological functions, we analyzed altered expression profiles of AmAChE1 induced by diverse stress factors. In addition, transcription profiles of several heat shock protein (Hsp) genes (hsps) and the vitellogenin (Vg)
Monolithic 3-D integration has emerged as a promising technological solution for traditional transistor scaling limitations and interconnection bottleneck. The challenge we must overcome is a processing temperature limit for top side devices in order to ensure proper performance of bottom side devices. To solve this problem, we developed a low temperature III–V and Ge layer stacking process using wafer bonding and epitaxial lift-off, since these materials can be processed at a low temperature an
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