Sungkyunkwan University · 材料科学
Professor Seong Chu Lim's research lab specializes in nanoscale electronic and optoelectronic devices, focusing on carbon nanotubes, 2D materials, and their heterostructures. Key research directions include field emission properties of carbon nanotube arrays, contact engineering for CNT interconnects, and the development of novel logic and sensing devices using transition metal dichalcogenides and graphene-based materials. The lab also investigates the influence of surface chemistry, gas adsorption, and infrared radiation on the electrical behavior of 2D and nanocarbon materials.
Figures are computed from collected data and may differ slightly.
The contact resistance of 14 different electrode metals with the work function between 3.9 and 5.7 eV has been investigated for carbon nanotube (CNT) interconnects. We observed that the contact resistance was mainly influenced by the two following parameters: the wettability and the work function difference of electrode metal to CNT. Ti, Cr, and Fe with good wettability showed lower resistance than other metals. Furthermore, no dependence of the contact resistance on the work function difference
Various functional devices including p-n forward, backward, and Zener diodes are realized with a van der Waals heterostructure that are composed of molybdenum disulfide (MoS<sub>2</sub>) and molybdenum ditelluride (MoTe<sub>2</sub>) by changing the thickness of the MoTe<sub>2</sub> layer and common gate bias. In addition, the available negative differential transconductance of the heterostructure is utilized to fabricate a many-valued logic device that exhibits three different logic states ( i.e
Correction for 'Thickness-dependent in-plane thermal conductivity of suspended MoS2 grown by chemical vapor deposition' by Jung Jun Bae et al., Nanoscale, 2017, 9, 2541-2547.
Carbon nanotubeshave many advantages over conventional semiconductor and metal emitters for field emission displays (FEDs). However, the origin of the current saturation seen in carbon nanotubes at high fields is poorly understood. Here the effect of gas adsorbates on the field emission properties of patterned carbon nanotube arrays, such as the one shown in the Figure, is investigated.
This study characterizes the effects of incident infrared (IR) radiation on the electrical conductivity of graphene oxide (GO) and examines its potential for mid-IR detection. Analysis of the mildly reduced GO (m-GO) transport mechanism near room temperature reveals variable range hopping (VRH) for the conduction of electrons. This VRH behavior causes the m-GO resistance to exhibit a strong temperature dependence, with a large negative temperature coefficient of resistance of approximately -2 to
We grew vertically aligned carbon nanotubes (CNTs) using microwave plasma-enhanced (MPE) and thermal chemical-vapor deposition (CVD) and characterized their field emission properties. We observe that the flickering and instability in the field emission are due to the metal particles present on the field-emission array (FEA) surface, particularly from the MPECVD-grown samples. The existence of metal particles is an obstacle to obtaining reliable emission properties. The emission properties of the
The mechanism of field emission from a metal surface was well explained based on the quantum mechanics in early 20th century. Since then, various materials have been studied for field emitters. However, so far, we have been using only limited materials as a field emitter and an application in some area requires further scientific understandings and technological advancements. In this paper, we review the current status of researches in field emission and emission phenomena of carbon nanotubes (C
We have studied an oxidation effect of multiwalled carbon nanotubes (MWCNTs) grown by thermal chemical vapor deposition (CVD) using ultraviolet photoelectron spectroscopy (UPS) and transmission electron microscopy (TEM). With an increasing oxygen exposure, the carbon 2p-π states at ∼3 eV below the Fermi level in the UPS spectra almost disappear, whereas the 2p-σ states around 6 eV are significantly increased. Annealing above 1000 K results in an increase of the density of states (DOSs) near the
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