Kyung Hee University · 工学
Professor Seungjun Chung's research lab specializes in the development of advanced printable and flexible electronic devices, with a strong focus on inkjet-printing technologies for low-cost, high-performance thin-film electronics. The lab explores innovative materials and interface engineering strategies—particularly involving silver electrodes, 2D transition metal dichalcogenides (TMDs), and organic semiconductors—to enhance device performance, stability, and scalability. Key research directions include contact engineering for 2D semiconductors, mechanical robustness of stretchable electrodes, and interfacial passivation for high-efficiency organic and 2D field-effect transistors.
Figures are computed from collected data and may differ slightly.
We report high-performance all-inkjet-printed organic thin-film transistors (OTFTs), where inkjet-printed silver electrodes, cross-linked poly(4-vinylphenol) (PVP) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were used as gate/source/drain electrodes, a gate dielectric layer and an active semiconductor layer, respectively. To evaluate quality of the active semiconductor layer, we also fabricated OTFTs by using spin-coating and drop-casting methods for TIPS-pentacene layer on
We propose a novel design of thermoelectric (TE) effect-based soft temperature sensors for directly monitoring localized subtle temperature stimuli. This design integrates rheology-engineered three-dimensional (3D) printing of high-performance carbon-based TE materials and polymer-based viscoelastic materials with low thermal conductivity. Rheological engineering of carbon nanotube (CNT) TE inks ensures the 3D printing of highly sensitive TE sensing units on directly written 3D soft platforms. A
We report fully inkjet-printed organic thin-film transistors (OTFTs) and inverters with an average channel length of 9 μm and minimized overlap capacitance between gate and source/drain (S/D) electrodes on a flexible plastic substrate. Metal-organic precursor-type silver ink, poly(4-vinylphenol), and 6, 13-bis (triisopropylsilylethynyl)pentacene were used to form the gate and S/D electrodes, the gate dielectric, and the active semiconductor layer, respectively. Well-defined S/D electrodes with n
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