Hanyang University · 工学
Professor Seyong Oh's research lab specializes in next-generation neuromorphic electronics, focusing on the development of flexible, optoelectronic, and three-terminal artificial synapses using advanced oxide semiconductors, organic semiconductors, and 2D materials. The lab pioneers innovative device architectures—such as ion-gel-based synaptic transistors, vertical synaptic structures, and nanostructured organic phototransistors—that enable bidirectional synaptic plasticity, nondestructive readout, and optical weight modulation. Their work emphasizes materials engineering for defect control, ion mobility, and interface engineering to achieve stable, high-performance neuromorphic devices suitable for brain-inspired computing and low-power AI hardware.
Figures are computed from collected data and may differ slightly.
The priority of synaptic device researches has been given to prove the device potential for the emulation of synaptic dynamics and not to functionalize further synaptic devices for more complex learning. Here, we demonstrate an optic-neural synaptic device by implementing synaptic and optical-sensing functions together on h-BN/WSe<sub>2</sub> heterostructure. This device mimics the colored and color-mixed pattern recognition capabilities of the human vision system when arranged in an optic-neura
Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS<sub>2</sub>) heterojunctio
Abstract Recently, research interest in brain‐inspired neuromorphic computing based on robust and intelligent artificial neural networks has surged owing to the ability of such technology to facilitate massive parallel, low‐power, highly adaptive, and event‐driven computing. Here, a photosynaptic device with a novel weight updating mechanism for high‐speed and low‐power optoelectronic spike processing is proposed, wherein a synaptic weight is controlled by a mixed spike consisting of voltage and
A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.
Recently, three-terminal synaptic devices have attracted considerable attention owing to their nondestructive weight-update behavior, which is attributed to the completely separated terminals for reading and writing. However, the structural limitations of these devices, such as a low array density and complex line design, are predicted to result in low processing speeds and high energy consumption of the entire system. Here, we propose a vertical three-terminal synapse featuring a remote weight
Brain-inspired parallel computing, which is typically performed using a hardware neural-network platform consisting of numerous artificial synapses, is a promising technology for effectively handling large amounts of informational data. However, the reported nonlinear and asymmetric conductance-update characteristics of artificial synapses prevent a hardware neural-network from delivering the same high-level training and inference accuracies as those delivered by a software neural-network. Here,
We propose a flexible artificial synapse based on a silicon-indium-zinc-oxide (SIZO)/ion gel hybrid structure directly fabricated on a polyimide substrate, where the channel conductance is effectively modulated via ion movement in the ion gel. This synaptic operation is possible because of the low-temperature deposition process of the SIZO layer (<150°C) and the surface roughness improvement of the poly(4-vinylphenol) buffer layer (12.29→1.81 nm). The flexible synaptic device exhibits extremely
Abstract In recent years, optoelectronic artificial synapses have garnered a great deal of research attention owing to their multifunctionality to process optical input signals or to update their weights optically. However, for most optoelectronic synapses, the use of optical stimuli is restricted to an excitatory spike pulse, which majorly limits their application to hardware neural networks. Here, we report a unique weight-update operation in a photoelectroactive synapse; the synaptic weight c
Recently, three-terminal synaptic devices, which separate read and write terminals, have attracted significant attention because they enable nondestructive read-out and parallel-access for updating synaptic weights. However, owing to their structural features, it is difficult to address the relatively high device density compared with two-terminal synaptic devices. In this study, a vertical synaptic device featuring remotely controllable weight updates via e-field-dependent movement of mobile io
The long-term plasticity of biological synapses was successfully emulated in an artificial synapse fabricated by combining low-surface defect van der Waals (vdW) and self-assembled (SA) materials. The synaptic operation could be achieved by facilitating hole trapping and releasing only via the amine (NH<sub>2</sub>) functional groups in 3-aminopropyltriethoxysilane, which consequently induced a gradual conductance change in the WSe<sub>2</sub> channel. The vdW-SA synaptic device exhibited extrem
This study introduces a photonic stimulation-based synaptic transistor utilizing oblique angle deposition (OAD) of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). While OAD enables advanced nanostructures, its application to organic materials remains largely unexplored. Here, the electrical characteristics and photoinduced trap behavior of obliquely deposited DNTT transistors are systematically investigated, successfully replicating key synaptic functions. OAD-controlled grain size and sp
A neuromorphic phototransistor based on nanowire-patterned diketopyrrolo-pyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) is reported. The nanowires, well-aligned with a width of 460 nm, spacing of 8-11 µm, and height of ≈80 nm, are fabricated using the stamping method of soft lithography and exhibit optically stimulated synaptic behavior. Under blue illumination (455 nm, 0.55 mW cm-2), a photogating effect arises at the DPP-DTT/SiO2 interface, leading to threshold voltage shifts up to 6.4 V as
Open papers in the app to read, cite, and organize with AI.