東京大学 · 工学
和田部俊教授の研究室では、有機半導体における分子ドーピングや界面制御技術を応用し、高効率な電荷輸送と熱電特性を実現する新規なナノスケール構造の創出をめざしています。特に、液体界面を用いた分子配列制御（LB・LS法）と高分子半導体の結晶性制御を組み合わせることで、金属的性質に近い電気的特性を有する高純度な膜を創出しています。また、超短パulsesレーザーの発展や有機トランジスタの低雑音特性の解明にも貢献しており、次世代の有機エレクトロニクスの基盤技術開発を推進しています。
Figures are computed from collected data and may differ slightly.
A novel route of molecular doping in organic semiconductors is demonstrated to achieve high carrier concentration.
The Langmuir-Blodgett (LB) and Langmuir-Schaefer techniques facilitate thermodynamic favorability at an air-water interface, at which nanoscale molecular aggregations can be manipulated by micrometer- or millimeter-scale mechanics. The customary use of an aqueous subphase has limitations in the available temperature and spread materials. We present a general strategy to replace the aqueous subphase with an inert, low-vapor-pressure liquid, ethylene glycol. As a representative spread material tha
Charge and thermoelectric transport should be closely correlated with each other; however, little is known regarding the origin of thermopower in semicrystalline $\ensuremath{\pi}$-conjugated polymers, particularly those doped with molecular dopants. It is controversial whether the well-established Mott formula is valid for such conducting polymers, which inevitably have a finite structural disorder. We show that a truly metallic regime that can be realized in a highly crystalline domain gives r
A peak power of 1 TW has been obtained in a XeCl laser with a pulse width of 310 fsec. Amplified spontaneous emission was investigated extensively by changing the gain of wide-aperture discharge amplifiers. As a result, the amplified spontaneous emission content was suppressed to less than 3% in energy through the use of an appropriate spatial filter before the final amplifier and by operating at a low gain level of 4.8%/cm.
A peak power of 4 TW has been obtained in KrF with an output energy of 1.5 J in 390 fsec from an electron-beam-pumped amplifier. The energy of the amplified spontaneous emission was as low as 1.8%. The pulse width was measured by the newly developed third-order autocorrelation technique based on the XeF C–A transition. Amplifiers increased the initial pulse width of 210 fsec to 390 fsec. The process of pulse-width broadening was investigated in detail. It was confirmed that the two-photon proces
Abstract Low-frequency noise generated by a fluctuation of current is a key issue for integrating electronic elements into a high-density circuit. Investigation of the noise in organic field-effect transistors is now sharing the spotlight with development of printed integrated circuits. The recent improvement of field-effect mobility (up to 15 cm 2 V −1 s −1 ) has allowed for organic integrated circuits with a relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding of the
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