九州大学 · 材料科学
Wu教授の研究室は、分子磁性体と多機能分子材料の設計・創出を柱としており、特にスピンカローリング、磁気秩序、スピンクロスオーバー、および磁電効果を示す分子系の開発に注力しています。4d・5d遷移金属錯体やランタニド錯体を用いた単分子磁性体や、スピン状態の制御可能な分子スイッチの開発が進んでいます。また、光と物質の相互作用を制御するためのナノスケールの超構造設計や、電子配置の精密制御による極性変化の誘導も重要な研究テーマです。
Figures are computed from collected data and may differ slightly.
Polarization change induced by directional electron transfer attracts considerable attention owing to its fast switching rate and potential light control. Here, we investigate electronic pyroelectricity in the crystal of a mononuclear complex, [Co(phendiox)(rac-cth)](ClO<sub>4</sub>)·0.5EtOH (1·0.5EtOH, H<sub>2</sub>phendiox = 9, 10-dihydroxyphenanthrene, rac-cth = racemic 5, 5, 7, 12, 12, 14-hexamethyl-1, 4, 8, 11-tetraazacyclotetradecane), which undergoes a two-step valence tautomerism (VT). C
A supramolecular strategy has been applied to construct two tetranuclear lanthanide complexes for investigating the magnetic properties of individual lanthanide ions. The Ln(III) complexes (Ln = Dy, Tb) display field-induced slow magnetization relaxation, typical of single-molecule magnet behavior. The four lanthanide ions in the molecules are well separated by distances of ca. 9 Å, and thus the slow magnetization relaxation should be assigned to single-ion magnet (SIM) behavior. Therefore, the
The development of magnetic molecules with long spin reversal/decoherence times highly depends on the understanding of relaxation behavior under different external conditions. Herein, a magnetic study on a Ru<sup>III</sup> complex (1) is presented. Detailed analysis of the relaxation time and the magneto-heat capacity data suggests that the resonant phonon trapping process dominates the magnetic relaxation in the crystalline sample of 1, slowing down the spin relaxation rate, as further confirme
Supramolecular strategy was employed to achieve the highest nuclearity Co(II) cluster exhibiting spin-crossover (SCO) behavior. Magnetic susceptibility characterization of the Co4(II) complex shows that two different spin-transition processes occur. The SCO behavior is directed by the partially deprotonated polydentate ligand, which favors the structural distortion required by the spin transition.
Molecular-based magnetoelectric materials are among the most promising materials for next-generation magnetoelectric memory devices. However, practical application of existing molecular systems has proven difficult largely because the polarization change is far lower than the practical threshold of the ME memory devices. Herein, we successfully obtained an [FeCo] dinuclear complex that exhibits a magnetic field-induced spin crossover process, resulting in a significant polarization change of 0.4
We present a tunable spin Hall effect of light (SHEL) by introducing a monolayer of graphene on the hexagonal boron nitride (hBN). The interaction between the phonon polaritons in hBN and the plasmon polaritons in graphene can significantly enhance the SHEL around epsilon-near-zero (ENZ) near reststrahlen band-I (RB-I) in a very wide range of incident angles and compress it obviously in reststrahlen band-II (RB-II). The spin shifts can be obtained by adjusting the ratio of reflective coefficient
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