大阪大学 · 工学
Matsumoto教授の研究室では、有機エレクトロニクスと酸化物半導体を基盤に、次世代情報処理や生体適合性デバイスの開発をめざしています。特に、有機電気化学ネットワークや酸化物薄膜のエpitaxial成長を用いた新規デバイスの創出が中心であり、ハイブリッドな物性と機能を制御する研究が進められています。また、生体模倣組織の作製技術や非相反性磁波のメカニズム解明など、多様な分野にまたがる応用研究も展開しています。
Figures are computed from collected data and may differ slightly.
A sulfonated polyaniline (SPAN) organic electrochemical network device (OEND) is fabricated using a simple drop-casting method on multiple Au electrodes for use in reservoir computing (RC). The SPAN network has humidity-dependent electrical properties. Under high humidity, the SPAN OEND exhibits mainly ionic conduction, including charging of an electric double layer and ionic diffusion. The nonlinearity and hysteresis of the current-voltage characteristics progressively increase with increasing
Techniques developed for the in vitro reproduction of three-dimensional (3D) biomimetic tissue will be valuable for investigating changes in cell function in tissues and for fabricating cell/matrix composites for applications in tissue engineering techniques. In this study, we show that the simple application of a continuous strain to a fibrin gel facilitates the development of fibril alignment and bundle-like structures in the fibrin gel in the direction of the applied strain. Myoblasts culture
We investigate a microscopic origin of nonreciprocal magnons that is distinct from the Dzyaloshinskii-Moriya interaction in a honeycomb antiferromagnet. The key ingredient is a symmetric anisotropic exchange interaction depending on the bond direction, which results in valley-type nonreciprocal magnon excitations under staggered antiferromagnetic ordering. Furthermore, we find that this type of nonreciprocal magnon exhibits a peculiar magnetic-field response; the nonreciprocal direction can be m
The epitaxial growth of a Bi2Sr2CuO6 (2201) thin film on a Bi2Sr2CaCu2O8 (2212) single crystal has been performed using computer-controlled laser molecular beam epitaxy. The surface of the 2212 single crystal used as the substrate is smooth and invariant under the growth condition at 640 °C in NO2 pressure of 1×10−5 mbar. The growth process of the 2201 film has been observed by in situ reflection high-energy electron diffraction (RHEED), and the layer-by-layer growth of the 2201 phase is confirm
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