東京大学 · 材料科学
Yoshihiro Iwasa教授の研究室では、遷移金属ディチalcogenidesやフラーレンをはじめとする低次元材料を用いた、電子状態の制御と物性の創出を主眼とする物性科学研究が行われています。特に、電場によるドーピングを用いた超伝導の発現や、バルクや2次元材料におけるバルク自由度(スピン・スピン・谷)の制御が特徴です。これらの研究を通じて、次世代のエレクトロニクス・スピントロニクスデバイスの基盤技術の創出を目指しています。
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A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS(2), an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large
Tungsten diselenide (WSe2) and related transition metal dichalcogenides exhibit interesting optoelectronic properties owing to their peculiar band structures originating from the valley degree of freedom. Although the optical generation and detection of valley polarization has been demonstrated, it has been difficult to realize active valley-dependent functions suitable for device applications. We report an electrically switchable, circularly polarized light source based on the material's valley
The fullerene C(60) can be converted into two different structures by high pressure and temperature. They are metastable and revert to pristine C(60) on reheating to 300 degrees C at ambient pressure. For synthesis temperatures between 300 degrees and 400 degrees C and pressures of 5 gigapascals, a nominal face-centered-cubic structure is produced with a lattice parameter a(o) = 13.6 angstroms. When treated at 500 degrees to 800 degrees C at the same pressure, C(60) transforms into a rhombohedra
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