Seoul National University · 工学
Professor Young-Chang Joo's research lab specializes in advanced functional materials for energy and electronics applications, with a strong focus on oxide semiconductors, particularly hematite (α-Fe₂O₃), for photoelectrochemical water splitting. The lab investigates the fundamental roles of defects—especially oxygen vacancies—and their interactions with dopants to enhance charge transport and photoelectrochemical performance. It also explores the reliability and electromigration behavior of thin-film metal lines in flexible electronics, aiming to improve the mechanical and electrical stability of next-generation flexible devices. The lab combines advanced synthesis techniques, in situ characterization, and device-level testing to bridge materials design with practical performance.
Figures are computed from collected data and may differ slightly.
PSS are well preserved during the mechanical deformation.
The enhancement of the electrical conductivity by doping is important in hematite (α-Fe(2)O(3)) photoanodes for efficient solar water oxidation. However, in spite of many successful demonstrations using extrinsic dopants, such as Sn, Ti, and Si, the achieved photocurrent is still lower than the practical requirement. There is still lack of our understanding of how intrinsic oxygen defects can change the photocurrent and interact with the extrinsic dopants. In this study, we systematically invest
As the technology of flexible electronics has remarkably advanced, the long-term reliability of flexible devices has attracted much attention, as it is an important factor for such devices in reaching real commercial viability. To guarantee the bending fatigue lifetime, the exact evaluation of bending strain and the change in electrical resistance is required. In this study, we investigated the bending strains of Cu thin films on flexible polyimide substrates with different thicknesses using mon
Hematite (α-Fe2O3) has been attracting attention for photoelectrochemical water oxidation due to its visible light photon absorption capacity and high chemical stability, but the short-diffusion length of holes and the large overpotential are still challenging to overcome. Here, in an effort to address these challenges, we develop a hierarchically nanostructured photoanode composed of iron-oxides; Ti-doped hematite nanorods are decorated with an undoped hematite underlayer and β-FeOOH nano-branc
Passivated and unpassivated Al single-crystal lines with (110), (133), and (111) planes parallel to the substrate have been fabricated and electromigration tests have been performed to study transgranular failure mechanisms. Both erosion voids and slitlike voids with {111} facets were observed in single-crystal lines. The slitlike voids lie along the in-plane direction, which leads to minimum-surface-area voids among the crystallographically possible directions for the {111}-faceted voids. Voids
The electronic states of oxygen vacancies (VO s) in amorphous oxide semiconductors are shallow donors, deep donors or electron traps; these are determined by the local atomic structure. Because the amorphous phase is metastable compared with the crystalline phase, the degree of structural disorder is likely to decrease, which is referred to as structural relaxation (SR). Thus SR can affect the VO electronic state by changing the local atomic conditions. In this study, we demonstrated that electr
Ultra-small tin (Sn) nanoparticle embedded carbon (C) nanofibers are successfully fabricated by porosity control and they exhibit outstanding anode performance in all-solid-state batteries without current collectors and additives.
Precise control of the oxidation state of transition-metal oxides, such as copper, is important for high selectivity of CO<sub>2</sub> reduction in an aqueous condition to compete with the reduction of water. The phase of copper oxide nanofibers was controlled by predictive synthesis, which controls the nanoscale gas-solid reaction by considering thermodynamics and kinetics. The driving force of the phase transformation between the different oxidation states of copper oxide is calculated by comp
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