주영창 교수
Joo, Young-Chang
서울대학교 Department of Materials Science and Engineering · 공학
연구실 소개
주영창 교수의 연구실은 유연 전자소자와 광전해수소 생산을 핵심으로 삼는 다학제적 연구를 수행하고 있습니다. 특히 투명하고 유연한 전극 소재의 기계적 내구성과 전기적 안정성을 동시에 확보하기 위한 나노구조 설계 및 전자 이송 거동 분석에 중점을 두고 있으며, 허브마이트(α-Fe₂O₃) 기반 광반도체에서 산소 공여 결함과 도핑의 상호작용을 통해 태양광 분해 수소 생산 효율을 극대화하는 데 기여하고 있습니다. 또한 유기 전기화학 트랜지스터를 활용한 뉴로모픽 센싱 기술 개발을 통해 생체 신호 실시간 모니터링에 적합한 저전력·고속 반응 소자도 개발하고 있습니다.
연구 현황
연구 성과 추이
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
주요 논문
15PSS are well preserved during the mechanical deformation.
The enhancement of the electrical conductivity by doping is important in hematite (α-Fe(2)O(3)) photoanodes for efficient solar water oxidation. However, in spite of many successful demonstrations using extrinsic dopants, such as Sn, Ti, and Si, the achieved photocurrent is still lower than the practical requirement. There is still lack of our understanding of how intrinsic oxygen defects can change the photocurrent and interact with the extrinsic dopants. In this study, we systematically invest
As the technology of flexible electronics has remarkably advanced, the long-term reliability of flexible devices has attracted much attention, as it is an important factor for such devices in reaching real commercial viability. To guarantee the bending fatigue lifetime, the exact evaluation of bending strain and the change in electrical resistance is required. In this study, we investigated the bending strains of Cu thin films on flexible polyimide substrates with different thicknesses using mon
Hematite (α-Fe2O3) has been attracting attention for photoelectrochemical water oxidation due to its visible light photon absorption capacity and high chemical stability, but the short-diffusion length of holes and the large overpotential are still challenging to overcome. Here, in an effort to address these challenges, we develop a hierarchically nanostructured photoanode composed of iron-oxides; Ti-doped hematite nanorods are decorated with an undoped hematite underlayer and β-FeOOH nano-branc
Organic neuromorphic computing/sensing platforms are a promising concept for local monitoring and processing of biological signals in real time. Neuromorphic devices and sensors with low conductance for low power consumption and high conductance for low-impedance sensing are desired. However, it has been a struggle to find materials and fabrication methods that satisfy both of these properties simultaneously in a single substrate. Here, nanofiber channels with a self-formed ion-blocking layer ar
Passivated and unpassivated Al single-crystal lines with (110), (133), and (111) planes parallel to the substrate have been fabricated and electromigration tests have been performed to study transgranular failure mechanisms. Both erosion voids and slitlike voids with {111} facets were observed in single-crystal lines. The slitlike voids lie along the in-plane direction, which leads to minimum-surface-area voids among the crystallographically possible directions for the {111}-faceted voids. Voids
Abstract It remains a fundamental challenge in the development of stretchable electronics to understand how mechanical strain changes the electrical properties of materials. Although the piezoresistive behavior of poly(3,4‐ethylene‐ dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been observed, its intrinsic origin is not yet fully understood because there are many extrinsic contributing factors and an experimental platform with which to assess such behavior has not been established. Here
Cu acetate/PAN nanofibers were transformed into porous C nanofibers with doped N and Cu particles,<italic>via</italic>O<sub>2</sub>partial pressure-controlled calcination. N atoms next to Cu trigger the CO<sub>2</sub>RR by increasing the amount of CO* on the Cu, lowering the energy needed for CO dimerization.
The electronic states of oxygen vacancies (VO s) in amorphous oxide semiconductors are shallow donors, deep donors or electron traps; these are determined by the local atomic structure. Because the amorphous phase is metastable compared with the crystalline phase, the degree of structural disorder is likely to decrease, which is referred to as structural relaxation (SR). Thus SR can affect the VO electronic state by changing the local atomic conditions. In this study, we demonstrated that electr
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