Sungkyunkwan University · 材料科学
Professor Ghulam Dastgeer's research lab specializes in the design, fabrication, and characterization of two-dimensional (2D) van der Waals heterostructures for advanced electronic and optoelectronic applications. The lab focuses on atomically thin semiconductors such as transition metal dichalcogenides, black phosphorus, and chalcogenide-based materials to develop high-performance field-effect transistors, p-n diodes, and photodetectors with tunable rectification, high sensitivity, and strong anisotropic responses. Key research directions include heterostructure engineering, interface control, and the exploitation of intrinsic 2D material properties for next-generation nanoelectronics and biosensors.
Figures are computed from collected data and may differ slightly.
Abstract Bipolar junction transistors (BJTs), the basic building blocks of integrated circuits, are deployed to control switching applications and logic operations. However, as the thickness of a conventional BJT device approaches a few atoms, its performance decreases substantially. The stacking of atomically thin 2D semiconductor materials is advantageous for manufacturing atomically thin BJT devices owing to the high carrier density of electrons and holes. Here, an atomically thin n–p–n BJT d
Recently, van der Waals heterostructures (vdWHs) based on transition-metal dichalcogenides (TMDs) have attracted significant attention owing to their superior capabilities and multiple functionalities. Herein, a novel vdWH field-effect transistor (FET) composed of molybdenum ditelluride (MoTe<sub>2</sub> ) and palladium diselenide (PdSe<sub>2</sub> ) is studied for highly sensitive photodetection performance in the broad visible and near-infrared (VNIR) region. A high rectification ratio of 6.3
Abstract The most emerging 2D‐materials‐based heterostructures are considered promising candidates because of their multifunctional logic applications for electric and optoelectronic devices. Here, a high gate tunable rectification in van der Waals heterostructure composed of n‐type rhenium disulfide (n‐ReS 2 ) and p‐type germanium selenide (p‐GeSe), using pure Ohmic contacts, is reported. The large rectification ratio (RR) deprived of any Schottky contribution is tuned up to 4 × 10 5 because of
Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with v
A lateral phototransistor structure based on mechanically exfoliated multilayer black arsenic (b-As) is produced to test its in-plane anisotropy of photoelectrical properties. First, the morphology and structure of the b-As flake are investigated with respect to light polarization and crystal structure orientation. Then, the Raman modes, demonstrating a strong anisotropic nature of twofold symmetry for in-plane vibrations and fourfold symmetry for out-of-plane vibrations, allow us to define the
Since two-dimensionalal (2D) materials have distinct chemical and physical properties, they are widely used in various sectors of modern technologies. In the domain of diagnostic biodevices, particularly for point-of-care (PoC) biomedical diagnostics, 2D-based field-effect transistor biosensors (bio-FETs) demonstrate substantial potential. Here, in this review article, the operational mechanisms and detection capabilities of biosensing devices utilizing graphene, transition metal dichalcogenides
Van der Waals (vdW) heterostructures composed of atomically thin two-dimensional (2D) materials have more potential than conventional metal-oxide semiconductors because of their tunable bandgaps, and sensitivities. The remarkable features of these amazing vdW heterostructures are leading to multi-functional logic devices, atomically thin photodetectors, and negative differential resistance (NDR) Esaki diodes. Here, an atomically thin vdW stacking composed of p-type black arsenic (b-As) and n-typ
Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO<sub>2</sub>/WTe<sub>2</sub>)
With perovskite materials, rapid progress in power conversion efficiency (PCE) to reach 25% has gained a significant amount of attention from the solar cell industry. Since the development of solid-state perovskite solar cells, rapid research development and investigation on structure design, device fabrication and fundamental studies have contributed to solid-state perovskite solar cells to be a strong candidate for next-generation solar energy. The promising efficiency with low-cost materials
Solar water evaporation is vital for addressing global water scarcity, particularly in regions with limited freshwater. Through the utilization of photothermal materials, solar water evaporation harnesses solar radiation to generate heat, which in turn accelerates the evaporation of water, producing clean drinking water. Subsequently, the vapor is condensed to produce fresh water, offering a sustainable solution to water scarcity. This research field has garnered immense scientific interest, wit
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