Gwan‐Hyoung Lee

Atomically thin forms of layered materials, such as conducting graphene, insulating hexagonal boron nitride (hBN), and semiconducting molybdenum disulfide (MoS2), have generated great interests recently due to the possibility of combining diverse atomic layers by mechanical "stacking" to create novel materials and devices. In this work, we demonstrate field-effect transistors (FETs) with MoS2 channels, hBN dielectric, and graphene gate electrodes. These devices show field-effect mobilities of up

Pristine graphene is the strongest material ever measured. However, large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain grain boundaries that can potentially weaken the material. We combined structural characterization by means of transmission electron microscopy with nanoindentation in order to study the mechanical properties of CVD-graphene films with different grain sizes. We show that the elastic stiffness of CVD-graphene is ide

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained;

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high perfor

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS₂-metal contacts decreases with the thickness of MoS₂. We obtained a Schottky barrier height as low as about 70 meV when MoS₂ is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS<sub>2</sub

The advent of 3D printing has had a disruptive impact in manufacturing and can potentially revolutionize industrial fields. Thermoplastic materials printable into complex structures are widely employed for 3D printing. Polylactic acid (PLA) is among the most promising polymers used for 3D printing, owing to its low cost, biodegradability, and nontoxicity. However, PLA is electrically insulating and mechanically weak; this limits its use in a variety of 3D printing applications. This study demons

We report an in situ TEM investigation of the growth and transformation in nanometer‐sized titania powders. The powders were produced through precipitation of titanium tetrachloride under different pH conditions. The initial phase of the produced powders was amorphous or was a mixture of anatase and brookite according to the pH conditions. During calcination, the anatase particles grew and transformed into rutile. The transformation temperature increased with increasing pH value. In situ TEM obs

The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically

Since the successful isolation of single-layer graphene with an atomic thickness, various van der Waals (vdW) materials have been intensively studied owing to their unique properties. Among the families of vdW materials, transition metal dichalcogenides (TMDs) have served as representatives because of their diverse band structures and intriguing quantum states, unlike those observed in their bulk counterparts. Particularly, unconventional polymorphic phases of TMDs increase the degrees of freedo

Covalent functionalization of the surface is more crucial in 2D materials than in conventional bulk materials because of their atomic thinness, large surface-to-volume ratio, and uniform surface chemical potential. Because 2D materials are composed of two surfaces with no dangling bond, covalent functionalization enables us to improve or precisely modify the electrical, mechanical, and chemical properties. In this review, we summarize the covalent functionalization methods and related changes in

van der Waals (vdW) materials have shown unique electrical and optical properties depending on the thickness due to strong interlayer interaction and symmetry breaking at the monolayer level. In contrast, the study of electrical and tribological properties and their thickness-insensitivity of van der Waals oxides are lacking due to difficulties in the fabrication of high quality two-dimensional oxides and the investigation of nanoscale properties. Here we investigated various tribological and el