Korea University · 工学
Professor Gyu-Tae Kim's research lab specializes in the development and characterization of advanced 2D materials and nanostructured devices for next-generation electronics and energy applications. Key research directions include interface engineering in 2D semiconductor heterostructures, high-performance field-effect transistors via chemical doping, and nanoarchitectured anodes for high-rate lithium-ion batteries. The lab also focuses on innovative nanofabrication techniques for suspended nanostructures and optoelectronic devices such as p-n heterojunction photodetectors and light-emitting diodes. Their work bridges fundamental nanoscale phenomena with practical device integration, emphasizing performance enhancement through material innovation and defect control.
Figures are computed from collected data and may differ slightly.
Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the i
We present an amorphous Si anode deposited on a Cu nanopillar current collector, fabricated using a thermal roll-to-roll process followed by electroformation and LPCVD, for application in high-rate Li-ion batteries. Cu nanopillar current collectors with diameters of 250 and 500 nm were patterned periodically with 1 μm pitch and 2 μm height to optimize the diameters of the pillars for better electrochemical performance. Void spaces between Cu nanopillars allowed not only greater effective control
A simple and general technique for producing a suspended nanofiber has been developed using coordinate markers and a sacrificial layer of poly(methylmethacrylate). The simple procedure does not involve etching processes or chemical vapor deposition and makes it easier to investigate the physical properties of nanofibers in a suspended configuration. As a demonstration, a suspended carbon nanotube rope was fabricated and Young’s modulus was determined to be 0.4 TPa from the force calibration of a
Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS<sub>2</sub>) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS<sub>2</sub> FETs were enhanced at room temperature. Extracted field effect mobil
Abstract We report on the fabrication and optoelectronic properties of p‐n heterojunction arrays of p + ‐type Si and aligned n‐type SnO 2 nanowires with high rectification ratios of >10 4 at ±15 V. The electrical stability of the p‐n heterojunction devices was improved by coating the junction with poly(methylmethacrylate) to minimize the degradation of the interface layer at the junction. As a photodiode an enhanced UV photosensitivity higher than 10 2 was recorded under reverse bias. Using a
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