신형철 교수

이상의 '아해'는 식민통치와 공모하고 있는 오이디푸스적 권력의 사생아들이다. 혹은 그 권력의 날카로운 반영이다. 그리고 이에 대한 이상의 전략은 사회적·가족적 재생산을 담당하는 어른이 되기를 포기하는 것이다. 노동하지 않고, 섹스하지 않는 주체, 즉 '무기체 되기'.그러나 이상의 보다 적극적인 전략은 유기체에서 무기체로의 전신(轉身)에 있는 것이 아니다. 이상의 가장 독창적인, 그리고 가장 문학적인 전략은 다름 아니라 이상의 '발명', 자연인 김해경에서 문학인 이상으로의 탈출이다. 이는 단지 김해경이 '李箱'이라는 필명을 사용했다는 차원의 이야기가 아니다. 이상은 '李箱'이라는 이름으로 완전히 다른 삶을 도모했었다. 텍스트에서 '이상'이라는 이름을 노출시키면서 그가 겨냥했던 것은, 그 조각조각 나뉘어진 텍스트(text)들을 모아서 말 그대로 하나의 직물(texture)을 짜는 것이었다. 그것은 '이상'이라는 '텍스트'를 만들어, '이상'이라는 '삶'을 구성하는 작업이다. '이상'이라

The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices,SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with planar structure were investigated. To analyze the difference in SSs, TCAD simulation and low-frequency noise (LFN) measurement were fulfilled. The device simulation was performed to compare SSs considering the gate electric field effect to the channel an

Power amplifier circuits are implemented with graphene field-effect transistors (FETs), capacitors and inductors, and their gain is improved step-by-step by adjusting the passive components. The transistors are fabricated on a 150-mm wafer using conventional complementary-metal-oxide semiconductor processing along with graphene transferring processes. The completed circuit is implemented on a printed circuit board, which allows for adjustment of the external capacitance and inductance to study t

Control of threshold voltage (VT) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For VT-modulation larger than 100 mV, heavy ground

Threshold voltage is one of the most important factors in a device modeling. In this paper,analytical method to calculate threshold voltage for recessed channel (RC) MOSFETs is studied. If we know the fundamental parameter of device, such as radius, oxide thickness and doping concentration,threshold voltage can be obtained easily by using this model. The model predicts the threshold voltage which is the result of 2D numerical device simulation.

In this paper, the Self Heating Effect (SHE) is investigated in silicon on insulator (SOI) nanowire MOSFETs. A comprehensive study of SHE in Nanowire FET (NWFET) was implemented by Technology Computer-Aided Design (TCAD) simulation. Through analysis of on-current (Ion), thermal resistance (RTH), and heat flux, the DC characteristics of SHE were investigated according to the increase of buried oxide thickness (Tbox). The results indicate that leakage current is not changed according to Tbox so th

Random telegraph noise in the drain current (I_d RTN) and the gate current (I_g RTN) has been studied to characterize slow oxide traps in a thin gate oxide. First, I_g RTN was classified into two categories from its dependence on gate bias. Through the analysis of I_d and I_g RTNs, the distribution of oxide traps in the thin oxide was also studied. Most of the oxide traps obtained from I_d RTN were found to be in the middle range of the oxide and to have an energy level within a narrow range whe

In this work, compact current modeling of field-effect transistors (FETs) with transferred graphene channel grown by using chemical vapor deposition is presented. A highly-doped silicon substrate is used as a back gate, channels are defined by using electron-beam lithography, and the channel length of the transistor is scaled down to 20 nm. The DC characteristics of the scaled graphene transistors are observed by considering the source/drain series resistances. In compact modeling of graphene FE

The channel backscattering coefficient and injection velocity have been extracted experimentally in 65 nm MOSFETs. Thanks to an experimental extraction methodology taking into account multi-subband population, we demonstrate that the short channel ballistic efficiency is slightly greater than long channel ballistic efficiency.

In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measureme

Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of Vds, because it does not assume a linear approximation to obtain the i

We have investigated the noise sensitivity of low noise amplifier (LNA) at different frequency. This noise sensitivity analysis provides insights about noise parameters and it is very beneficial for making appropriate design trade-offs. From this work, the circuit designer can choose the adequate noise parameters tolerances.

In this article, the term “disaster literature” is narrowly defined: works submitted in response to actual historical disasters. Disaster literature will reflect the factual aspects of real disasters, and of particular importance will be the patterns of human behavior in times of disaster, rather than the disaster itself. This can be divided into social solidarity and social conflict. Disaster literature is a dual response to this. It joins or creates social solidarity and intervenes in social c

이 글은 ‘재난문학’이라는 개념을 좁게, 즉 실제로 발생한 역사적 재난에 대한 대응으로 제출된 작품으로 규정한다. 재난문학은 현실 재난의 사실적 국면들을 반영할 것이고, 특히 중요한 재현 대상은 재난 그 자체라기보다는 재난 시기의 인간 행동 패턴이 될 것이다. 이를 사회적 연대(social solidarity)와 사회적 갈등(social conflict)으로 나눌 수 있다. 재난문학은 이에 대한 이중적 대응이다. ‘사회적 연대’에 동참하거나 그것을 창조하고, ‘사회적 갈등’에 개입해서 그 근거를 해체한다. 첫 번째 유형을 ‘치유서사’라 부를 수 있다. 피해자들의 고통을 언어화하여 그 고통에 형상(figure)을 부여하고 그것이 공적 영역 속에 존재하도록 만든다. 사회적 연대의 매개 역할을 하는 것이 치유서사의 몫이다. 두 번째 유형을 ‘대항서사’라 부를 수 있다. 재난을 바라보는 특정한 인식/서사가 지배서사의 자리를 차지하면서 사회적 갈등을 촉발할 때 대항서사로서의 재난문학은 재난을