신형철 교수

A simple and accurate parameter-extraction method of a high-frequency small-signal MOSFET model including the substrate-related parameters and nonreciprocal capacitors is proposed. Direct extraction of each parameter using a linear regression approach is performed by Y-parameter analysis on the proposed equivalent circuit of the MOSFET for high-frequency operation. The extracted results are physically meaningful and good agreement has been obtained between the simulation results of the equivalen

In this paper, we developed a simple wide-band inductor model that contains lateral substrate resistance and capacitance to model the decrease in the series resistance at high frequencies related to lateral coupling through the silicon substrate. The model accurately predicts the equivalent series resistance and inductance over a wide-frequency range. Since it has frequency-independent elements, the proposed model can be easily integrated in SPICE-compatible simulators. The proposed model has be

Capacitive touch-screen technology introduces new concepts to user interfaces, such as multi-touch, pinch zoom-in/out gestures, thus expanding the smartphone market. However, capacitive touch-screen technology still suffers from performance degradation like a low frame scan rate and poor accuracy, etc. One of the key performance factors is the immunity to external noise, which intrudes randomly into the touch-screen system. HUM, display noise, and SMPS are such noise sources. The main electrical

The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

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Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new method for extracting both locations (x <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> , y <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmln

Oxide shorts density obtained from large test capacitors is found to be higher than that in a multiple of separated small capacitors having the same total oxide area. The observed difference in failure rate is explained by the different oxide charging currents for the weak spots in the two devices during plasma processing. This experiment can explain the observed lower density of shorts after plasma processing in ICs, which is composed of many small devices, than in test structures which are lar

A new method for extracting pi-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented.