北海道大学 · 工学
福島大学工学部の藤田修教授研究室では、強相関電子系のスピンペイエルズ状態や低次元スピン系の磁気励起状態を中性子散乱を用いて精密に解明する研究を行っています。また、神経形態計算用LSIに応用可能な高精度アナログメモリとしての浮遊ゲートMOSFETの開発も進め、ナノスケールの電荷制御技術の構築を目指しています。これらの研究は、物性物理学とデバイス工学の融合を図る画期的な分野です。
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The magnetic field dependence of the spin-Peierls gap in CuGe${\mathrm{O}}_{3}$ has been studied by means of neutron inelastic scattering. The splitting of the single gap state into three distinct excitation branches under a magnetic field can be regarded as direct evidence for the singlet-triplet transition in a spin-Peierls system.
A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-
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