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김상범 교수

Sang-Bum Kim

서울대학교 · 공학

연구실 소개

김상범 교수의 연구실은 신경형 컴퓨팅과 신소재 기반의 차세대 정보 처리 기술을 핵심으로 연구하고 있습니다. 특히, 인공지능 구현에 도전하는 메모리 기반 신경형 아키텍처, 예를 들어 PCM(상변화 메모리) 및 멤리스터를 활용한 실시간 학습이 가능한 하드웨어 설계와 유기 전자소자를 활용한 저전력 생체 신호 처리 기술에 중점을 두고 있습니다. 또한 자연어 처리 및 의미 기반 정보 검색 기술을 통해 소프트웨어적 지능과 하드웨어적 효율성을 융합한 통합 솔루션 개발을 추구하고 있습니다.

신경형 컴퓨팅메모리 기반 AI유기 전자소자상변화 메모리의미 기반 정보 검색

연구 현황

논문 수
409
총 인용 수
9,585
최근 5년 논문
65
주요 분야
공학

연구 성과 추이

표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.

5개년 연도별 논문 게재 수
65총합
2021
2022
2023
2024
2025
5개년 연도별 피인용 수
722총합
20212022202320242025

주요 논문

15
1
논문|인용수 572·2006
Some Effective Techniques for Naive Bayes Text Classification
Sang‐Bum Kim, Kyoung-Soo Han, Hae‐Chang Rim, Sung Hyon Myaeng
SJR Q1FWCI 12.7IEEE Transactions on Knowledge and Data Engineering

While naive Bayes is quite effective in various data mining tasks, it shows a disappointing result in the automatic text classification problem. Based on the observation of naive Bayes for the natural language text, we found a serious problem in the parameter estimation process, which causes poor results in text classification domain. In this paper, we propose two empirical heuristics: per-document text normalization and feature weighting method. While these are somewhat ad hoc methods, our prop

Artificial IntelligenceComputer Science
2
논문|인용수 192·2015
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
Sang‐Bum Kim, Masatoshi Ishii, S.H. Lewis, T. Perri, M. BrightSky, W. Kim, Richard C. Jordan, Geoffrey W. Burr, Norma Sosa, A. Ray, Jin‐Ping Han, Christopher P. Miller
FWCI 12.2

We demonstrate a neuromorphic core with 64k-cell phase change memory (PCM) synaptic array (256 axons by 256 dendrites) with in-situ learning capability. 256 configurable on-chip neuron circuits perform leaky integrate and fire (LIF) and synaptic weight update based on spike-timing dependent plasticity (STDP). 2T-1R PCM unit cell design separates LIF and STDP learning paths, minimizing neuron circuit size. The circuit implementation of STDP learning algorithm along with 2T-1R structure enables bo

Electrical and Electronic EngineeringEngineering
3
리뷰|인용수 132·2020
Competing memristors for brain-inspired computing
Seung Ju Kim, Sang‐Bum Kim, Ho Won Jang
SJR Q1FWCI 6.6iScienceOA

The expeditious development of information technology has led to the rise of artificial intelligence (AI). However, conventional computing systems are prone to volatility, high power consumption, and even delay between the processor and memory, which is referred to as the von Neumann bottleneck, in implementing AI. To address these issues, memristor-based neuromorphic computing systems inspired by the human brain have been proposed. A memristor can store numerous values by changing its resistanc

Electrical and Electronic EngineeringEngineering
4
논문|인용수 110·2002
Reaction mechanisms of MnMoO4 for high capacity anode material of Li secondary battery
Sang‐Bum Kim
SJR Q2FWCI 7.2Solid State Ionics
Electrical and Electronic EngineeringEngineering
5
book chapter|인용수 86·2002
Effective Methods for Improving Naive Bayes Text Classifiers
Sang‐Bum Kim, Hae‐Chang Rim, Dongsuk Yook, Heuiseok Lim
SJR Q2FWCI 0.9Lecture notes in computer science
Artificial IntelligenceComputer Science
6
논문|인용수 79·2009
Flame retardant properties of polyurethane produced by the addition of phosphorous containing polyurethane oligomers (II)
Yeong-Jin Chung, Younhee Kim, Sang‐Bum Kim
SJR Q1FWCI 2.6Journal of Industrial and Engineering Chemistry
Polymers and PlasticsMaterials Science
7
논문|인용수 74·2004
Information retrieval using word senses
Sang‐Bum Kim, Hee-Cheol Seo, Hae‐Chang Rim
FWCI 9.9

Information retrieval using word senses is emerging as a good research challenge on semantic information retrieval. In this paper, we propose a new method using word senses in information retrieval: root sense tagging method. This method assigns coarse-grained word senses defined in WordNet to query terms and document terms by unsupervised way using co-occurrence information constructed automatically. Our sense tagger is crude, but performs consistent disambiguation by considering only the singl

Artificial IntelligenceComputer Science
8
논문|인용수 74·2021
Nanofiber Channel Organic Electrochemical Transistors for Low‐Power Neuromorphic Computing and Wide‐Bandwidth Sensing Platforms
Sol‐Kyu Lee, Young Woon Cho, Jong‐Sung Lee, Young‐Ran Jung, Seung‐Hyun Oh, Jeong‐Yun Sun, Sang‐Bum Kim, Young‐Chang Joo
SJR Q1FWCI 5.6Advanced ScienceOA

Organic neuromorphic computing/sensing platforms are a promising concept for local monitoring and processing of biological signals in real time. Neuromorphic devices and sensors with low conductance for low power consumption and high conductance for low-impedance sensing are desired. However, it has been a struggle to find materials and fabrication methods that satisfy both of these properties simultaneously in a single substrate. Here, nanofiber channels with a self-formed ion-blocking layer ar

Electrical and Electronic EngineeringEngineering
9
논문|인용수 71·2011
Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage
Sang‐Bum Kim, Byoungil Lee, Mehdi Asheghi, Fred Hurkx, John P. Reifenberg, Kenneth E. Goodson, H.‐S. Philip Wong
SJR Q2FWCI 3.8IEEE Transactions on Electron Devices

We study the drift behavior of RESET resistance <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$R_{\rm RESET}$</tex> </formula> and threshold switching voltage <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$V_{\rm th}$</tex></formula> in phase-change memory (PCM) and their temperature dependence. To extend the t

Materials ChemistryMaterials Science
10
논문|인용수 69·2019
Phase-change memory cycling endurance
Sang‐Bum Kim, Geoffrey W. Burr, Wanki Kim, Sung‐Wook Nam
SJR Q1FWCI 2.7MRS Bulletin
Materials ChemistryMaterials Science
11
논문|인용수 59·2021
Catalyze Materials Science with Machine Learning
Jaehyun Kim, Donghoon Kang, Sang‐Bum Kim, Ho Won Jang
SJR Q1FWCI 3.5ACS Materials Letters

Discovering and understanding new materials with desired properties are at the heart of materials science research, and machine learning (ML) has recently offered special shortcuts to the ultimate goal. Thanks to the nourishment of computer hardware and computational chemistry, the development of calculated scientific data repositories could fuel the ML models to investigate the vast materials space. At this moment, understanding this revolutionary paradigm is urgent, and this Review aims to del

Materials ChemistryMaterials Science
12
논문|인용수 51·2007
Analysis of Temperature in Phase Change Memory Scaling
Sang‐Bum Kim, H.‐S. Philip Wong
SJR Q1FWCI 3.3IEEE Electron Device Letters

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We analyze constant-voltage isotropic and nonisotropic scaling issues for phase change memory (PCM) based on electrothermal physics. Various analytical and simulation models of general and typical PCM cells that support the analysis is also provided. The analysis shows that the maximum temperature in the PCM cell, which is a key parameter for PCM operation, is independent of geometrical sizes and dep

Materials ChemistryMaterials Science
13
논문|인용수 50·2022
Recent Advances in Synaptic Nonvolatile Memory Devices and Compensating Architectural and Algorithmic Methods Toward Fully Integrated Neuromorphic Chips
Kanghyeon Byun, In-Hyuk Choi, Soonwan Kwon, Younghoon Kim, Donghoon Kang, Young Woon Cho, Seung Keun Yoon, Sang‐Bum Kim
SJR Q1FWCI 4.3Advanced Materials Technologies

Abstract Nonvolatile memory (NVM)‐based neuromorphic computing has been attracting considerable attention from academia and the industry. Although it is not completely successful yet, remarkable achievements have been reported pertaining to synaptic devices that can leverage NVM capable of storing multiple states. The analog synaptic devices performing computation similar to biological nerve systems are crucial in energy‐efficient analog neuromorphic computing systems. To use NVM as an analog sy

Electrical and Electronic EngineeringEngineering
14
논문|인용수 47·2021
Elucidating Ionic Programming Dynamics of Metal‐Oxide Electrochemical Memory for Neuromorphic Computing
Yangho Jeong, Hyunjoon Lee, Da Gil Ryu, Seong Ho Cho, Ga‐Won Lee, Sang‐Bum Kim, Sangbum Kim, Seyoung Kim, Seyoung Kim, Yun Seog Lee
SJR Q1FWCI 3.1Advanced Electronic Materials

Abstract Cross‐point arrays of synaptic devices have been investigated as a core platform for neuromorphic computing architectures. To achieve a significant speed boost in deep neural network computations compared to the von Neumann architecture, it is essential to develop synaptic devices with optimal performance for fully parallel vector‐matrix‐multiplication. Among various non‐volatile memory candidates, metal‐oxide based electrochemical random‐access memory (ECRAM) is considered as a promisi

Electrical and Electronic EngineeringEngineering
15
논문|인용수 43·2013
A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
Sang‐Bum Kim, Norma Sosa, M. BrightSky, Daisuke Mori, W. Kim, Yu Zhu, Koukou Suu, C. Lam
FWCI 1.1

We demonstrate a novel confined PCM cell structure which utilizes a metallic surfactant layer to stabilize the high (and intermediate) resistance state drift in MLC phase change memory technology. The metallic surfactant layer provides an alternative conductive path to the amorphous region during read operation, which makes the cell characteristics immune to amorphous region instabilities such as time- and temperature-dependent resistance drift and noise. The data here focuses on time-dependent

Materials ChemistryMaterials Science

대표 연구 분야

Electrical and Electronic EngineeringAerospace EngineeringMaterials ChemistryArtificial IntelligencePolymers and PlasticsManagement, Monitoring, Policy and Law

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