Hong-sik Jung
Ulsan National Institute of Science and Technology · 工学
研究室紹介
Professor Hong-sik Jung's research lab specializes in advanced semiconductor device engineering, with a primary focus on next-generation 3D NAND flash memory technologies. The lab explores innovative materials and device architectures to overcome critical challenges such as low hole mobility in oxide semiconductors and threshold voltage instability in select gate structures. By integrating novel materials like P-type oxide semiconductors and ferroelectric materials with metal gate optimization, the lab develops highly reliable and scalable memory solutions. Their work emphasizes process stability, enhanced charge control, and improved device performance for future high-density data storage applications.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
2In this paper, we propose an optimized device structure to address issues in 3D NAND flash memory devices, which encounter difficulties when using the hole erase method due to the unfavorable hole characteristics of indium gallium zinc oxide (IGZO). The proposed structure mitigated the erase operation problem caused by the low hole mobility of IGZO by introducing a filler inside the IGZO channel. It facilitated the injection of holes into the IGZO channel through the filler, while the existing P
In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory applications. The proposed device utilizes nickel (Ni) instead of tungsten (W) for the GSL and SSL gates, enabling optimized polarization properties during the annealing process and leveraging the disparity in thermal expansion coefficients. Notably,