Hyungsuk Yoo
Hanyang University · 工学
研究室紹介
Professor Hyungsuk Yoo's research lab specializes in advanced oxide semiconductor materials and their applications in next-generation electronic and biomedical devices. The lab focuses on atomic layer deposition (ALD)-based heterostructure engineering to achieve ultrahigh mobility and stability in amorphous oxide semiconductors, leveraging quantum confinement and 2D-like electron transport. A key research direction involves understanding and mitigating radiofrequency (RF) heating in implantable medical devices due to MRI-induced electromagnetic fields, particularly around conductive implants. The lab combines materials synthesis, nanofabrication, and electromagnetic simulation to develop safer, high-performance devices for healthcare and electronics.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
2ABSTRACT Achieving ultrahigh mobility in oxide semiconductors without sacrificing stability has remained a long‐standing challenge owing to their inherent disorder and the tradeoff between mobility and stability. In this study, we demonstrated for the first time that the completeness of atomic layer deposition (ALD) surface reactions is the key factor for the formation of well‐defined vertical heterostructures in amorphous InGaZnO (IGZO) thin films, which in turn trigger quantum confinement effe
When a patient takes an MRI scan, the patient has a risk of unexpected injuries due to the intensive electromagnetic (EM) field. Among the injuries, the tissue heating by the time-varying EM field is one of the main issues. Since an implanted artificial structure with a conductive material aggravates the heating effect, lots of studies have been conducted to investigate the effect around the implants. In this review article, a mechanism of RF heating around the implants and related studies are c