Jae Hoon Park
Pohang University of Science and Technology · 材料科学
研究室紹介
Professor Jae Hoon Park's research lab specializes in advanced functional materials and their electronic properties, with a strong focus on quantum materials, half-metallic and magnetic oxides, and defect engineering in complex oxides. The lab investigates novel phenomena such as half-metallicity, spin–orbit coupling, and charge ordering in perovskite and pyrochlore structures, aiming to uncover fundamental mechanisms behind electronic and magnetic behavior. Additionally, the lab explores the role of electron correlation and lattice dynamics in determining material properties, with applications in spintronics, energy-efficient electronics, and quantum devices. Their work bridges theoretical modeling with experimental characterization, particularly in oxide heterostructures and thin films for next-generation technologies.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15During tumour progression, cancer cells use diverse mechanisms to escape from apoptosis-inducing stimuli, which may include receptor internalization, inhibition of signal pathways, and regulation of specific sets of genes. Substantial numbers of colon cancer cells have been observed to express Fas/Fas ligand, but are resistant to Fas-mediated apoptosis, suggesting that colonic tumours might develop specific mechanisms to overcome Fas-mediated apoptosis. Recently, cellular FLICE-like inhibitory p
Based on the theoretical exploration of electronic structures, we propose that the ordered double perovskites $\mathrm{La}A{\mathrm{VRuO}}_{6}$ and ${\mathrm{LaVO}}_{3}/A{\mathrm{RuO}}_{3}$ (001) superlattice $(A=\mathrm{Ca},$ Sr, and Ba) are strong candidates for half-metallic (HM) antiferromagnets (AFM's). We have shown that the HM-AFM nature in $\mathrm{La}A{\mathrm{VRuO}}_{6}$ is very robust regardless of (i) divalent ion replacement at A sites, (ii) oxygen site relaxation, (iii) the inclusi
We extend the charge-transfer model with the core-hole--3d-electron Coulomb attraction [van der Laan et al., Phys. Rev. B 23, 4369 (1981)] to the 2p core-level photoemission satellite structures of cobalt, iron, and manganese dihalides. This model was found to account for the positions and intensities of satellites and main peaks very well with reasonable values of parameters. These parameter values show the expected trends not only along the ligand series from fluorine to bromine but also along
Parallel plate capacitors employing Bi1.5Zn1.0Nb1.5O7 (BZN) thin films with the pyrochlore structure were fabricated on platinized sapphire substrates. The total device quality factor and capacitance were analyzed in the microwave frequency range (up to 20 GHz) by measuring reflection coefficients with a vector network analyzer. The parasitics due to the probe pads were extracted from the measurements. The total device quality factor, which included losses from the dielectric and the electrodes,
Mitochondria are known to play a fundamental role in apoptosis by releasing apoptogenic molecules such as cytochrome c into the cytoplasm, thereby sequentially activating initiator caspase-9. However, the mechanisms of cytochrome c release or caspase-9 activation in response to hypoxia are unclear. In this report, we show that caspase-9 is activated by reactive oxygen species (ROS) without involvement of cytochrome c release in hypoxic injury. In addition, activated caspase-9 induces permeabilit
Spin–orbit coupling results in technologically-crucial phenomena underlying magnetic devices like magnetic memories and energy-efficient motors. In heavy element materials, the strength of spin–orbit coupling becomes large to affect the overall electronic nature and induces novel states such as topological insulators and spin–orbit-integrated Mott states. Here we report an unprecedented charge-ordering cascade in IrTe2 without the loss of metallicity, which involves localized spin–orbit Mott sta
Abstract Recently, kagome lattice materials have emerged as a new model material platform for discovering and engineering novel quantum phases of matter. In this work, we elucidate the driving mechanism of the $$\sqrt{{{3}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msqrt> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml:msqrt> </mml:math> × $$\sqrt{{{3}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msqrt> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml
A monolithic Ku-band phase shifter employing voltage tunable Bi/sub 1.5/Zn/sub 1.0/Nb/sub 1.5/O/sub 7/ (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175/spl deg/ was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit /spl sim/5
Abstract Matter–light interaction is at the center of diverse research fields from quantum optics to condensed matter physics, opening new fields like laser physics. A magnetic exciton is one such rare example found in magnetic insulators. However, it is relatively rare to observe that external variables control matter‐light interaction. Here, it is reported that the broken inversion symmetry of multiferroicity can act as an external knob enabling magnetic excitons in the van der Waals antiferro
Abstract Although a variety of stretchable strain sensors based on electrical percolation have been reported, stretchable sensors detecting low strains have been rarely demonstrated. This is because large stretchability of a strain sensor conflicts with high strain resolution at low strains. Here, the electrical percolation into 2D is confined and a strain sensor that is highly sensitive at low strains and simultaneously highly stretchable is presented. The 2D confinement of the electrical perco
We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold vo
We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bondi