Jong Kyu Kim
Pohang University of Science and Technology · 物理学・天文学
研究室紹介
Professor Jong Kyu Kim's research lab specializes in optoelectronics and advanced semiconductor materials, with a primary focus on enhancing the efficiency and performance of nitride-based light-emitting diodes (LEDs) and solid-state lighting. The lab investigates critical challenges such as efficiency droop in GaN LEDs, p-type GaN ohmic contact engineering, and phosphor conversion efficiency through innovative device architecture and surface treatments. Additionally, the lab explores electrocatalysts for renewable hydrogen production, particularly through tuning Ni-based thin films for efficient hydrogen evolution in alkaline electrolysis.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15Abstract About twenty years ago, in the autumn of 1996, the first white light‐emitting diodes (LEDs) were offered for sale. These then‐new devices ushered in a new era in lighting by displacing lower‐efficiency conventional light sources including Edison's venerable incandescent lamp as well as the Hg‐discharge‐based fluorescent lamp. We review the history of the conception, improvement, and commercialization of the white LED. Early models of white LEDs already exceeded the efficiency of low‐wat
Abstract Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride‐based light‐emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research, as it retards the advancement of solid‐state lighting which is just starting to supplant fluorescent as well as incandescent lighting. Although the technical community does not yet have consented to a single cause of droop, this article provides a summary of the present state of droop research, re
Developing efficient and inexpensive electrocatalysts for the hydrogen evolution reaction (HER) in alkaline water electrolysis plays a key role for renewable hydrogen energy technology. The slow reaction kinetics of HER in alkaline solutions, however, has hampered advances in high-performance hydrogen production. Herein, we investigated the trends in HER activity with respect to the binding energies of Ni-based thin film catalysts by incorporating a series of oxophilic transition metal atoms. It
Enhancement of phosphor efficiency is reported for GaInN-based white light-emitting diodes (LEDs) employing a large separation between the primary LED emitter and the wavelength converter, and a diffuse reflector cup. Ray-tracing simulations show that extraction efficiency of wavelength-converted light is enhanced by 75%. The experimental improvement in phosphor efficiency of blue-pumped yellow phosphor is 15.4% compared with conventional phosphor-based white LEDs. The improvement is attributed
Ohmic contact to p-type GaN with the lowest contact resistivity was developed by the surface treatment prior to Pd/Au metal deposition. The contact resistivity drastically decreased from 2.9×10−2 to 4.3×10−4 Ω cm2 by the surface treatment using aqua regia. The surface treatment plays a role in removing the surface oxide formed on p-type GaN during epitaxial growth, and subsequently in reducing the barrier height for holes at the interface of Pd/p-type GaN, resulting in the good ohmic contacts to
The field of photonics starts with the efficient generation of light. The generation of efficient yet highly controllable light can indeed be accomplished with light-emitting diodes (LEDs), which are, in principle, capable of generating white light with a 20 times greater efficiency than conventional light bulbs. Deployed on a global scale to replace conventional sources, such solid-state light sources will result in enormous benefits that, over a period of 10 years, include (1) gigantic energy
Various tandem cell configurations have been reported for highly efficient and spontaneous hydrogen production from photoelectrochemical solar water splitting. However, there is a contradiction between two main requirements of a front photoelectrode in a tandem cell configuration, namely, high transparency and high photocurrent density. Here we demonstrate a simple yet highly effective method to overcome this contradiction by incorporating a hybrid conductive distributed Bragg reflector on the b
Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN∕low-n ITO/Ag O
While the demand for deep ultraviolet (DUV) light sources is rapidly growing, the efficiency of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their fundamentally limited light-extraction efficiency (LEE), calling for a novel LEE-enhancing approach to deliver a real breakthrough. Here, we propose sidewall emission-enhanced (SEE) DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active
Abstract Despite the adverse effects of H 2 bubbles adhering to catalyst's surface on the performance of water electrolysis, the mechanisms by which H 2 bubbles are effectively released during the alkaline hydrogen evolution reaction (HER) remain elusive. In this study, a systematic investigation on the effect of nanoscale surface morphologies on H 2 bubble release behaviors and HER performance by employing earth‐abundant Ni catalysts consisting of an array of Ni nanorods (NRs) with controlled s
A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO2 ohmic contact to p-type GaN, a quarter-wave thick SiO2 low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at λ=450 nm for an GaN/SiO2/Ag ODR, much higher than that for a 20 period Al0.25Ga0.75N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO2/SiO2/Ag ODR ha
We present high performance gas sensors based on an array of near single crystalline TiO(2) nanohelices fabricated by rotating oblique angle deposition (OAD). The combination of large surface-to-volume ratio, extremely small size (<30 nm) comparable to the Debye length, a near single crystallinity of TiO(2) nanohelices, together with the unique top-and-bottom electrode configuration hugely improves the H(2)-sensing performance, including ∼10 times higher response at 50 ppm, approximately a facto
A method for enhancing the light-extraction efficiency of GaInN light-emitting diodes (LEDs) by complete elimination of total internal reflection is reported. Analytical calculations show that GaInN LEDs with multilayer graded-refractive-index pillars, in which the thickness and refractive index of each layer are optimized, have no total internal reflection. This results in a remarkable improvement in light-extraction efficiency. GaInN LEDs with five-layer graded-refractive-index pillars, fabric