Jongyeol Ahn
Sungkyunkwan University
研究室紹介
Professor Jongyeol Ahn's research lab specializes in the epitaxial growth and fundamental characterization of two-dimensional materials, particularly graphene and hexagonal boron nitride (h-BN), on semiconductor substrates such as SiC and Si. The lab focuses on controlling the atomic-scale interface structures during heteroepitaxial growth, enabling the synthesis of high-quality, transfer-free 2D heterostructures with tailored electronic and structural properties. Key research directions include the development of novel buffer layers—such as amorphous boron-nitrogen interlayers—and the exploration of quasicrystalline graphene phases via twist-angle engineering. The lab employs advanced surface science techniques, including low-energy electron diffraction, angle-resolved photoemission spectroscopy, and X-ray photoelectron spectroscopy, to probe interfacial electronic structures at the atomic level.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
2Multilayer graphene was synthesized on an atomically thin silicon oxynitride (SiON) layer. This SiON layer was itself grown on a SiC(0001) wafer. The number of graphene layers was approximately controlled through the manipulation of argon partial pressure and exposure time. Both SiC and Si wafers are standard and commercially available substrates in the semiconductor industry, underscoring the importance of growing graphene layers on these wafers without the need for a transfer process. The mult
We revisit the interfacial structure underlying the growth of graphene quasicrystals on SiC, previously realized by a twisted bilayer graphene with a twist angle of 30°. While the formation of graphene quasicrystals via an h-BN-mediated growth process has been established, the microscopic nature of the interface between the overlayer and the SiC substrate has remained unclear. Using a combination of low-energy electron diffraction, angle-resolved photoemission spectroscopy, and core-level X-ray