Kab‐Jin Kim
Korea Advanced Institute of Science and Technology · 物理学・天文学
研究室紹介
Professor Kab-Jin Kim's research lab specializes in spintronics and nanomagnetic devices, focusing on the fundamental physics of current-driven magnetization dynamics, magnetic skyrmions, and spin Hall nano-oscillators. The lab explores energy-efficient magnetic memory and logic devices, with particular emphasis on electric-field control of magnetic properties, domain wall dynamics, and room-temperature spintronic applications using two-dimensional materials. Their work combines advanced experimental techniques—such as in situ electrical resistance measurements, magnetic X-ray microscopy, and real-time domain wall imaging—with theoretical modeling to develop next-generation neuromorphic and low-power magnetic technologies.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15We present an analytic theory of the Joule heating in metallic nanowires. The steady state is calculated for heat conduction through the insulation layer and then the transient state is considered from the thermodynamics law. The temperature is predicted to exhibit a quick exponential decay to a steady state within a few tens of nanoseconds. The decay time is linearly dependent on the temperature coefficient and both increase to saturation values with the increasing wire width. The validity of t
(FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced gener
Abstract Spin Hall nano-oscillators (SHNOs) exploiting current-driven magnetization auto-oscillation have recently received much attention because of their potential for neuromorphic computing. Widespread applications of neuromorphic devices with SHNOs require an energy-efficient method of tuning oscillation frequency over broad ranges and storing trained frequencies in SHNOs without the need for additional memory circuitry. While the voltage-driven frequency tuning of SHNOs has been demonstrate
The energy barrier of a magnetic domain wall trapped at a defect is measured experimentally. When the domain wall is pushed by an electric current and/or a magnetic field, the depinning time from the barrier exhibits perfect exponential distribution, indicating that a single energy barrier governs the depinning. The electric current is found to generate linear and quadratic contributions to the energy barrier, which are attributed to the nonadiabatic and adiabatic spin-transfer torques, respecti
We investigate temperature, temporal and magnetic-field dependence of unidirectional magnetoresistance (UMR) in metallic bilayers. The UMR is found to decrease rapidly with reducing temperature and converges to a finite value at low-temperature limit. The temporal dependence shows that the UMR emerges in a nanosecond time scale, which depends on the current amplitude. The magnetic-field dependence shows that the UMR is almost constant up to 5 T. These experimental results imply that the high-ene
Current-controlled magnetic domain wall motion has opened the possibility of a novel type of shift register memory device, which has been optimistically predicted to replace existing magnetic memories. Owing to this promising prospect, intensive work has been carried out during the last few decades. In this article, we first review the progress in the study of current-induced magnetic domain wall motion. Underlying mechanisms behind the domain wall motion, which have been discovered during last
We investigate the wire-width dependence of the critical current density for the motion of a magnetic domain wall (DW) in asymmetric Co/Ni nanowires, where spin Hall torque dominates the current-induced DW motion. It is found that both the critical current density for DW motion and the pinning field of a DW increase as the wire width decreases and that the critical current density for DW motion is proportional to the pinning field of the DW; this finding suggests a tradeoff between low-power ope
Electrical conduction in magnetic materials depends on their magnetization configuration, resulting in various magnetoresistances (MRs). The microscopic mechanisms of MR have so far been attributed to either an intrinsic or extrinsic origin, yet the contribution and temperature dependence of either origin has remained elusive due to experimental limitations. In this study, we independently probed the intrinsic and extrinsic contributions to the anisotropic MR (AMR) of a permalloy film at varying