Kyung‐Jin Lee
Korea Advanced Institute of Science and Technology · 物理学・天文学
研究室紹介
Professor Kyung-Jin Lee's research lab specializes in spintronics and quantum materials, focusing on spin-orbit phenomena, magnetic torque effects, and the electrical manipulation of magnetization in nanostructured devices. The lab investigates fundamental mechanisms such as the orbital Hall effect, Rashba spin-orbit coupling, and spin-transfer torque in heterostructures, with applications in next-generation low-power memory and logic devices. They also explore emerging concepts in 2D materials and solid electrolyte memories, combining advanced experimental techniques with theoretical modeling to uncover microscopic switching mechanisms. Their work bridges quantum materials physics with practical device integration, particularly in spintronic and neuromorphic computing platforms.
Research Overview
Research Output Trend
Figures are computed from collected data and may differ slightly.
Selected Papers
15The orbital Hall effect describes the generation of the orbital current flowing in a perpendicular direction to an external electric field, analogous to the spin Hall effect. As the orbital current carries the angular momentum as the spin current does, injection of the orbital current into a ferromagnet can result in torque on the magnetization, which provides a way to detect the orbital Hall effect. With this motivation, we examine the current-induced spin-orbit torques in various ferromagnet/h
We studied current-induced magnetic switching and excitations in structures comprising a free layer with in-plane magnetization traversed by a current with perpendicular-to-plane spin polarization. We derived analytical solutions from the Landau–Lifshitz–Gilbert equation including the spin-torque term, and compared them to numerical simulations within the single domain assumption. Taking into account the criterion of thermal stability, the magnetization switching in nanostructures of typical siz
Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing. Detailed facts of importance to s
Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transi
BACKGROUND: Two-dimensional (2D) speckle imaging has shown that it could evaluate not only regional but also global strain (epsilon) and strain rate (SR) of the left and right ventricles. There are no data for global epsilon/SR imaging for left atrial (LA) function evaluation. METHODS: A total of 54 subjects (37 men; mean age, 44 +/- 10 years) with normal treadmill exercise stress echocardiography and no coronary risk factors were enrolled. Global longitudinal LA epsilon/SR data obtained by 2D s