Seongkwang Kim

Abstract This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors (PDs) designed for high-resolution imaging from the visible to short-wavelength infrared (SWIR) spectrum. Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer (AL). Therefore, we propose a guided-mode resonance (GMR) structure to enhance the quantum efficiency (QE) of the InGaAs PDs in the SWIR region with only sub-micron-t

Abstract A high‐speed and broadband 5 × 5 photodetector array based on MoS 2 /In 0.53 Ga 0.47 As heterojunction is successfully demonstrated to take full advantage of the type‐II band‐aligned multilayer MoS 2 /In 0.53 Ga 0.47 As. The fabricated devices exhibit good uniformity in the Raman spectrum and clear rectifying characteristics. The fabricated MoS 2 /In 0.53 Ga 0.47 As photodetectors show good optical performances at a broad wavelength range showing high responsivities corresponding to the

Monolithic 3-D integration has emerged as a promising technological solution for traditional transistor scaling limitations and interconnection bottleneck. The challenge we must overcome is a processing temperature limit for top side devices in order to ensure proper performance of bottom side devices. To solve this problem, we developed a low temperature III–V and Ge layer stacking process using wafer bonding and epitaxial lift-off, since these materials can be processed at a low temperature an

The Rasta cipher, proposed by Dobraunig et al. (CRYPTO 2018), is an HE-friendly cipher enjoying the fewest ANDs per bit and the lowest ANDdepth among the existing ciphers. A novel feature of Rasta is that its affine layers are freshly and randomly generated for every encryption. In this paper, we propose a new variant of Rasta, dubbed Masta. Similarly to Rasta, Masta takes as input a (master) secret key and a nonce, and generates a keystream block for each counter. On the other hand, Masta has t

Post-quantum signature schemes based on the MPC-in-the-Head (MPCitH) paradigm are recently attracting significant attention as their security solely depends on the one-wayness of the underlying primitive, providing diversity for the hardness assumption in post-quantum cryptography. Recent MPCitH-friendly ciphers have been designed using simple algebraic S-boxes operating on a large field in order to improve the performance of the resulting signature schemes. Due to their simple algebraic structu

A vertical bi-stable resistor (biristor) composed of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As was demonstrated for sub-1 V operation. An inherent small bandgap and a scaled base length of 150 nm led to the remarkable reduction in latch-up voltage compared to Si(Ge)-based conventional biristors. The epitaxially grown n-

HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> -based Si n-/p-type ferroelectric field-effect transistors (n/pFEFETs) were investigated from 300 to 82 K with pulse measurements, which disclosed device physics at low temperatures. Moreover, FEFET shows extremely improved performance (read-after-write latency < 100 ns and write endurance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org

A sub-micron-thick InGaAs photodetectors (PDs) with a broad spectrum coverage (400-1700 nm) and high external quantum efficiency (EQE) (>70%) were successfully demonstrated through guided-mode resonance structure and surface layer thinning process. It showed the outstanding EQE of 83.8%, and 65.5% at 1000 nm, 1550 nm for 500-nm-thick InGaAs absorption layer, respectively. Compared to previous results, thickness reduction by 6.8 times and comparable QE were simultaneously achieved.

Monolithic 3D (M3D) integration has attracted lots of attentions to continue equivalent scaling by vertically stacking transistors [1]. It allows the reduction of the interconnect delay, resulting in reduction of the power consumption of the chip, which is the attractive driving force for M3D integration. Moreover, with M3D, many other components such as digital, analog, MEMS, sensors, etc. can be heterogeneously integrated together in a single chip to provide enhanced functionality (Fig. 1). In

Private computation on common records refers to analyze data from two databases containing shared records without revealing personal information. As a basic requirement for private computation, the databases involved essentially need to be aligned by a common identification system. However, it is hard to expect such common identifiers in real world scenario. For this reason, multiple quasi-identifiers can be used to identify common records. As some quasi-identifiers might be missing or have typo

Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate for future high-resolution multicolor PDs. At the same time, it covered a broad wavelength range from visible to IR.