Yong‐Chae Chung

The effect of various electric field intensities on a Cu-field aided lateral crystallization (FALC) process of amorphous silicon(a-Si) films has been studied. The electric field intensity investigated in this study ranged from 15 V/cm to 180 V/cm. The intensity of the Raman spectral peak from the polycrystalline silicon (c-Si) increased monotonically with the electric field intensity during thermal annealing at a temperature of 450oC. The degree of crystallization calculated from the intensity o

While research in ceramics has focused on physical experiments, the need for computational aids is increasing more and more. Among several computer simulation tools for the design and analysis of various aspects of ceramics, the Voronoi diagram is introduced in this paper. The Voronoi diagram is a powerful tool in computational geometry which provides all spatial information among geometric objects in a system with an efficient data structure. In this paper, we present the properties of Voronoi

Using ab initio ultrasoft pseudopotential plane wave method, the effect of Cr doping concentration on the magnetic properties of /spl beta/-SiC (SiC:Cr) was investigated quantitatively. It is found that the total magnetic moment of SiC:Cr is independent of the substitution site and amount of doping concentration. Using the density of states calculation, it is shown that SiC:Cr has half-metallic properties for selected doping concentrations of 1.56%, 3.13%, and 6.25%, irrespective of substitution

In the evaluation of mate Presented in this paper is a mathematical and computational methodology to efficiently classify a given atomic structure of an arbitrary material into groups of atoms defining BCC, FCC, and HCP crystal structures. The approach is based on the angular distributions among neighboring atoms efficiently identified by a computational geometry technique called a Voronoi diagram. Usually a Voronoi diagram consists of Voronoi regions for each atom where a Voronoi region consist

Extreme ultraviolet (EUV) re ective multilayers were deposited and characterized. Since control of the d-spacing is critical for higher re ectivity, an effective and accurate d-spacing measurement technology is required. Even though cross-sectional transmission electron microscopy (TEM) and low-angle X-ray diffraction (XRD) are standard methods in evaluating multilayers, they provide dierent d-spacing values from each other. Cross-sectional TEM images can give a direct measurement of the individ

The performance of multilayer extreme ultraviolet (EUV) re ector has direct bearing on the process throughput and cost of new technology. Using 80 layers of a Mo/Si model and 120 layers of a Ru/Mo/Si model, we intended in this work to show that the re ectivity of the Bragg re ector can be improved by an optical anomaly based on a relative alteration of the layer thickness. As a result, by using the Mo/Si model with the thicknesses of the Mo layers increased equally and the Ru/Mo/Si model with th

The deposition and the diffusion behaviors of Al atoms on Cu surfaces of various orientations were investigated by using classical molecular dynamics simulations and molecular static calculations. Al atoms with a kinetic energy of 0.1 eV were deposited at room temperature. On the Cu(001) surface, the deposited Al atoms tend to agglomerate only with adjacent atoms. In the case of the Cu(111) surface, surface diffusion of Al atoms is significant even as a time scale between two consecutive deposit

Although Silica glass is a core material for optical bers in optical telecommunications, it has not been applied to active optical devices such as optical switches because its centro-symmetry eliminates the second-order nonlinearity. However, it is experimentally well known that spacecharge polarization induces second harmonic generation (SHG) when a strong DC voltage is applied to silica glass with metal blocking electrodes for a long period of time. The resulting potential-eld distribution ins

The structural configurations of atom constituting materials are one of the fundamental factors in the study of physical properties of materials. Presented in this paper is a mathematical and computational methodology to efficiently classify a given atomic structure of an arbitrary material into groups of atoms in BCC, FCC, and HCP crystal structures. The approach is based on the angle distributions among neighboring atoms efficiently identified by a computational geometry technique called Voron

Using the ab initio pseudopotential calculations, the surface diffusion and incorporation process at the interface of Fe-Al multilayer system were quantitatively investigated. The hollow site was most stable adsorption site on both Al (001) and Fe (001) surface. The adsorption energies were 8.62 eV for Fe/Al (001) and 5.30 eV for Al/Fe (001) system. The calculated energy barriers for the surface diffusion of adatom were 0.89 eV and 0.61 eV for each system. The energy barrier for the incorporatio

The structural configurations of atoms constituting materials are one of the fundamental factors in the study of the physical properties of materials. Presented in this paper is a mathematical and computational methodology based on Euclidean Voronoi diagrams to efficiently classify a given atomic structure of an Al-Co composite material into groups of atoms with BCC, FCC, and HCP crystal structures. In this paper, the presented mathematical theory has been applied to analyze a multi-layer atomic

The defect printability of Mo/Si and Ru/Mo/Si multilayer (ML) systems for EUV re ector was quantitatively investigated by monitoring an aerial image on the wafer. For the calculation of the aerial image intensity of a patterned ML mask containing a phase defect, SOLID-EUV, which is capable of rigorous electromagnetic-eld computation, was employed. The aerial-image intensity of a Ru/Mo/Si model was calculated and compared with the value for a Mo/Si model for various defect widths, heights, and po