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Yul-Hwa Kim

Sungkyunkwan University · 工学

研究室紹介

Professor Yul-Hwa Kim's research lab specializes in energy-efficient hardware accelerators for deep neural networks, with a focus on in-memory computing using emerging non-volatile memory technologies such as RRAM and SRAM. The lab pioneers novel circuit and architecture-level optimizations to enhance area and energy efficiency in neural network inference, particularly through precision-scalable designs, multilevel RRAM utilization, and innovative dataflow schemes. Key research directions include hardware-aware quantization, in-memory computation with resistive crossbar arrays, and monolithic integration of memory and logic for AI workloads.

in-memory computingRRAMneural network acceleratorsprecision scalinglow-power AI

Research Overview

Papers
38
Total Citations
517
Papers (5y)
22
Primary Field
工学

Research Output Trend

Figures are computed from collected data and may differ slightly.

Publications per year (5y)
22total
2022
2023
2024
2025
2026
Citations per year (5y)
135total
20222023202420252026

Selected Papers

15
1
Article|93 citations·2019
Area-Efficient and Variation-Tolerant In-Memory BNN Computing using 6T SRAM Array
Jin-Seok Kim, Jongeun Koo, Taesu Kim, Yulhwa Kim, Hyungjun Kim, Seunghyun Yoo, Jae‐Joon Kim

We introduce a SRAM-based binary neural network (BNN) hardware which uses a single 6T SRAM cell for XNOR operation for the first time. The cell is 45% smaller than the previous 8T bitcell for XNOR operation. We also propose an in-memory calibration and batch normalization to achieve more reliable operation under the presence of process variation.

Electrical and Electronic EngineeringEngineering
2
Article|86 citations·2019
Monolithically Integrated RRAM- and CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning
Shihui Yin, Yulhwa Kim, Xu Han, Hugh Barnaby, Shimeng Yu, Yandong Luo, Wangxin He, Xiaoyu Sun, Jae‐Joon Kim, Jae-sun Seo
SJR Q1IEEE Micro

Resistive RAM (RRAM) has been presented as a promising memory technology toward deep neural network (DNN) hardware design, with nonvolatility, high density, high ON/OFF ratio, and compatibility with logic process. However, prior RRAM works for DNNs have shown limitations on parallelism for in-memory computing, array efficiency with large peripheral circuits, multilevel analog operation, and demonstration of monolithic integration. In this article, we propose circuit-/device-level optimizations t

Electrical and Electronic EngineeringEngineering
3
Article|63 citations·2020
2-Bit-Per-Cell RRAM-Based In-Memory Computing for Area-/Energy-Efficient Deep Learning
Wangxin He, Shihui Yin, Yulhwa Kim, Xiaoyu Sun, Jae‐Joon Kim, Shimeng Yu, Jae-sun Seo
SJR Q1IEEE Solid-State Circuits Letters

In-memory computing (IMC) has emerged as a promising technique for enhancing energy efficiency of deep neural networks (DNNs). While embedded nonvolatile memory, such as resistive RAM (RRAM) is a good alternative to SRAM/DRAM for IMC owing to high density, low leakage, and nondestructive read, most prior works have not demonstrated using multilevel RRAM devices for array-level IMC operations. In this letter, we present an IMC prototype with 2-bit-per-cell RRAM devices for area-/energy-efficient

Electrical and Electronic EngineeringEngineering
4
Article|53 citations·2022
BitBlade: Energy-Efficient Variable Bit-Precision Hardware Accelerator for Quantized Neural Networks
Sungju Ryu, Hyungjun Kim, Wooseok Yi, Eunhwan Kim, Yulhwa Kim, Taesu Kim, Jae‐Joon Kim
SJR Q1IEEE Journal of Solid-State Circuits

We introduce an area/energy-efficient precision-scalable neural network accelerator architecture. Previous precision-scalable hardware accelerators have limitations such as the under-utilization of multipliers for low bit-width operations and the large area overhead to support various bit precisions. To mitigate the problems, we first propose a bitwise summation, which reduces the area overhead for the bit-width scaling. In addition, we present a channel-wise aligning scheme (CAS) to efficiently

Computer Vision and Pattern RecognitionComputer Science
5
Article|28 citations·2024
FIGNA: Integer Unit-Based Accelerator Design for FP-INT GEMM Preserving Numerical Accuracy
Jaeyong Jang, Yulhwa Kim, J.B. Lee, Jae‐Joon Kim

The weight-only quantization has emerged as a promising technique for alleviating the computational burden of large language models (LLMs) by employing low-precision integer (INT) weights, while retaining full-precision floating point (FP) activations to ensure inference quality. Despite the memory footprint reduction achieved through decreased bit-precision of weight parameters, the actual computing performance is often not improved significantly due to FP-INT multiply-accumulation (MAC) operat

Electrical and Electronic EngineeringEngineering
6
Article|27 citations·2018
Input-Splitting of Large Neural Networks for Power-Efficient Accelerator with Resistive Crossbar Memory Array
Yulhwa Kim, Hyungjun Kim, Daehyun Ahn, Jae‐Joon Kim
Proceedings of the International Symposium on Low Power Electronics and Design

Resistive Crossbar memory Arrays (RCA) have been gaining interest as a promising platform to implement Convolutional Neural Networks (CNN). One of the major challenges in RCA-based design is that the number of rows in an RCA is often smaller than the number of input neurons in a layer. Previous works used high-resolution Analog-to-Digital Converters (ADCs) to compute the partial weighted sum in each array and merged partial sums from multiple arrays outside the RCAs. However, such approach suffe

Electrical and Electronic EngineeringEngineering
7
Article|23 citations·2022
Extreme Partial-Sum Quantization for Analog Computing-In-Memory Neural Network Accelerators
Yulhwa Kim, Hyungjun Kim, Jae‐Joon Kim
SJR Q2ACM Journal on Emerging Technologies in Computing Systems

In Analog Computing-in-Memory (CIM) neural network accelerators, analog-to-digital converters (ADCs) are required to convert the analog partial sums generated from a CIM array to digital values. The overhead from ADCs substantially degrades the energy efficiency of CIM accelerators so that previous works attempted to lower the ADC resolution considering the distribution of the partial sums. Despite the efforts, the required ADC resolution still remains relatively high. In this article, we propos

Electrical and Electronic EngineeringEngineering
8
Article|23 citations·2019
In-memory batch-normalization for resistive memory based binary neural network hardware
Hyungjun Kim, Yulhwa Kim, Jae‐Joon Kim

Binary Neural Network (BNN) has a great potential to be implemented on Resistive memory Crossbar Array (RCA)-based hardware accelerators because it requires only 1-bit precision for weights and activations. While general structures to implement convolution or fully-connected layers in RCA-based BNN hardware were actively studied in previous works, Batch-Normalization (BN) layer, which is another key layer of BNN, has not been discussed in depth yet. In this work, we propose in-memory batch-norma

Electrical and Electronic EngineeringEngineering
9
Article|17 citations·2020
Algorithm/Hardware Co-Design for In-Memory Neural Network Computing with Minimal Peripheral Circuit Overhead
Hyungjun Kim, Yulhwa Kim, Sungju Ryu, Jae‐Joon Kim

We propose an in-memory neural network accelerator architecture called MOSAIC which uses minimal form of peripheral circuits; 1-bit word line driver to replace DAC and 1-bit sense amplifier to replace ADC. To map multi-bit neural networks on MOSAIC architecture which has 1-bit precision peripheral circuits, we also propose a bit-splitting method to approximate the original network by separating each bit path of the multi-bit network so that each bit path can propagate independently throughout th

Electrical and Electronic EngineeringEngineering
10
Article|17 citations·2022
Energy-Efficient In-Memory Binary Neural Network Accelerator Design Based on 8T2C SRAM Cell
Hyunmyung Oh, Hyungjun Kim, Daehyun Ahn, Jihoon Park, Yulhwa Kim, Inhwan Lee, Jae‐Joon Kim
SJR Q1IEEE Solid-State Circuits Letters

We present an in-memory binary neural network (BNN) accelerator based on 8-transistor and 2-capacitor (8T2C) SRAM cell. The proposed SRAM computing-in-memory (CIM) cells rely on DRAM-like charge sharing operations to avoid undesirable static currents and potential read-disturb problems in conventional resistive SRAM-CIM designs. In addition, unlike the previous capacitive SRAM-based CIM designs, the proposed SRAM CIM does not consume energy when the input value is 0, thereby achieving the higher

Electrical and Electronic EngineeringEngineering
11
Preprint|15 citations·2018
Neural Network-Hardware Co-design for Scalable RRAM-based BNN Accelerators
Yulhwa Kim, Hyungjun Kim, Jae‐Joon Kim
arXiv (Cornell University)OA

Recently, RRAM-based Binary Neural Network (BNN) hardware has been gaining interests as it requires 1-bit sense-amp only and eliminates the need for high-resolution ADC and DAC. However, RRAM-based BNN hardware still requires high-resolution ADC for partial sum calculation to implement large-scale neural network using multiple memory arrays. We propose a neural network-hardware co-design approach to split input to fit each split network on a RRAM array so that the reconstructed BNNs calculate 1-

Computer Vision and Pattern RecognitionComputer Science
12
Article|12 citations·2019
Effect of Device Variation on Mapping Binary Neural Network to Memristor Crossbar Array
Wooseok Yi, Yulhwa Kim, Jae‐Joon Kim

In memristor crossbar array (MCA)-based neural network hardware, it is generally assumed that entire word-lines (WLs) are simultaneously enabled for parallel matrix-vector multiplication (MxV) operation. However, the error probability of MxV in a memristor crossbar array (MCA) increases as the resistance ratio (R-ratio) of a memristor decreases and the resistance variation and the number of simultaneously activated WLs increase. In this paper, we analyze the effect of R-ratio and variation of me

Electrical and Electronic EngineeringEngineering
13
Article|10 citations·2021
Mapping Binary ResNets on Computing-In-Memory Hardware with Low-bit ADCs
Yulhwa Kim, Hyungjun Kim, Ji Hoon Park, Hyunmyung Oh, Jae‐Joon Kim

Implementing binary neural networks (BNNs) on computing-in-memory (CIM) hardware has several attractive features such as small memory requirement and minimal overhead in peripheral circuits such as analog-to-digital converters (ADCs). On the other hand, one of the downsides of using BNNs is that it degrades the classification accuracy. Recently, ResNet-style BNNs are gaining popularity with higher accuracy than conventional BNNs. The accuracy improvement comes from the high-resolution skip conne

Electrical and Electronic EngineeringEngineering
14
Article|10 citations·2020
A 44.1TOPS/W Precision-Scalable Accelerator for Quantized Neural Networks in 28nm CMOS
Sungju Ryu, Hyungjun Kim, Wooseok Yi, Jongeun Koo, Eunhwan Kim, Yulhwa Kim, Taesu Kim, Jae‐Joon Kim

Supporting variable precision for computing quantized neural network in a hardware accelerator is an efficient way to reduce overall computation time and energy. However, in the previous precision-scalable hardware, bit-reconfiguration logic increases the chip area significantly. In this paper, we demonstrate a compact precision-scalable accelerator chip using bitwise summation and channel-wise aligning schemes. The measurement results show that the peak performance per compute area is improved

Computer Vision and Pattern RecognitionComputer Science
15
Article|10 citations·2020
Time-step interleaved weight reuse for LSTM neural network computing
Naebeom Park, Yulhwa Kim, Daehyun Ahn, Taesu Kim, Jae‐Joon Kim

In Long Short-Term Memory (LSTM) neural network models, a weight matrix tends to be repeatedly loaded from DRAM if the size of on-chip storage of the processor is not large enough to store the entire matrix. To alleviate heavy overhead of DRAM access for weight loading in LSTM computations, we propose a weight reuse scheme which utilizes the weight sharing characteristics in two adjacent time-step computations. Experimental results show that the proposed weight reuse scheme reduces the energy co

Computer Vision and Pattern RecognitionComputer Science

Research Areas

Electrical and Electronic EngineeringComputer Vision and Pattern RecognitionArtificial IntelligenceHardware and Architecture

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