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Abstract Solution processing, including printing technology, is a promising technique for oxide thin‐film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high composition controllability and high throughput. However, solution‐processed oxide TFTs are limited by low‐performance and stability issues, which require high‐temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There h

A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias il

Nitrocellulose is proposed as a passivation layer for multilayer molybdenum disulfide (MoS2) thin-film transistors (TFTs) to improve the stability of the devices. After the devised passivation layer was stacked, the threshold voltage shift of the nitrocellulose-passivated MoS2 TFT after the positive-bias temperature stress tests decreased from 11.43 to 4.80 V. This enhanced stability was the result of the protection of the MoS2 channel from external reactive molecules like H2O, O2, and others in

As the trajectory of developing advanced electronics is shifting towards wearable electronics, various methods for implementing flexible and bendable devices capable of conforming to curvilinear surfaces have been widely investigated. In particular, achieving high-performance and stable flexible transistors remains a significant technical challenge, as transistors are fundamental components of electronics, playing a key role in overall performance. Among the wide range of candidates for flexible

The effects of applying the micro CHP system to the domestic sector in Korea were investigated using annual cooling and heating demand data. Four prime movers, micro gas turbine, PEMFC, gas engine and Stirling engine, were compared for three operational modes. Two way buy-back was assumed for both electricity and heat. The Stirling engine gave the lowest <TEX>$CO_2$</TEX> emission per energy for 300kWh monthly electricity production. However, PEMFC became more effective when considering PURPA cr

Lubricant oil is needed in air conditioning and refrigeration system because the compressor requires oil to prevent surface to surface contact between its moving parts, to remove heat, to provide sealing, to keep out contaminants, to prevent corrosion, and to dispose of debris created by wear. Thus, the oil separation in an oil separator is one of the most important characteristics for proper compressor operation. In this study, a gravity type of oil separator is used. Oil separation characteris

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light DetectionByung Ha KangByung Ha KangMore by Byung Ha Kang, Won-Gi KimWon-Gi KimMore by Won-Gi Kim, Jusung ChungJusung ChungMore by Jusung Chung, Jin Hyeok LeeJin Hyeok LeeMore by Jin Hyeok Lee, and Hyun Jae Kim*Hyun Jae KimMore by Hyun Jae Kimhttp://orcid.org/0000-0002-

Convection heat transfer enhancement is an important issue since this problem is of particular interest in the field of energy and environment. Ag nano-solution is expected not only to enhance heat transfer but also to work for deodorization and antifungal effect. An experimental investigation on the convective heat transfer characteristics for NaHCO3-Ag nano-compound material solution in a long and straight heated pipe has been carried out. NaHCO3 compound materials with 400 ppm or 1000 ppm Ag

We report a visible light phototransistor based on amorphous indium gallium zinc oxide (a‐IGZO) by stacking hydrogen doped oxide absorption layer. The absorption layer was fabricated by sputter process with mixture of Ar and H2 plasma conditions, so it is composed of hydrogen‐incorporated a‐IGZO (a‐IGZO:H). The absorption layer could absorb visible light due to increase in sub‐gap states via hydrogen plasma doping. As a result, a‐IGZO phototransistor with hydrogen doped absorption layer exhibits