변동진 교수

We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that ‘‘real-time’’ projection lithography (selective area dep

We have observed that molecular films of closo -1,2-dicarbadodecaborane ( C 2 B 10 H 12 ) decompose due to exposure to synchrotron light. Dissociation results in films that form a heterogeneous intermediate phase between associative molecular fragments and solid, thin film boron-carbide. This heterogeneous phase has an observed electronic structure that is an admixture of the electronic structure observed for molecularly condensed orthocarborane and the electronic structure anticipated for rhomb

Abstract An epitaxial, laterally‐overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high‐dose, N + ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal‐organic (MO) CVD. The GaN layer on the N + ion‐implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much slower than that of epitaxial GaN. After 120 min, complete coalescence is achieved with a

ZnO thin lms were deposited by using atomic layer deposition with a fixed purging time of the DEZinc and the H2O sources of 8 sec and an injection time of 1 sec per source. The ZnO films were formed in the temperature range from 30 ℃ to 300 ℃. The microstructure was altered by varying the temperature, and the shapes and the sizes of the grains were altered by changing the preferred orientation. The surface morphologies and the shapes of the grains were correlated with the preferred orientation,

It has been confirmed that the reactive ion (N+2) beam (RIB) pretreatment of the sapphire substrate at room temperature is an alternative pretreatment method. The chemical and physical status of RIB treated sapphire surface results in the etching of the surface and the formation of a very thin amorphous-like disordered AlON layer under the sapphire surface. The threading dislocation density of GaN on Al2O3(0001) with RIB pretreatment was decreased due to the partial crystallization of the RIB la

In this study, a gallium nitride (GaN) template fabrication method for efficient chemical lift-off (CLO) is developed. CLO is slower than other lift-off methods. An air tunnel structure is formed using a photoresist to reduce the process time and improve the etchant penetration rate. Furthermore, an aluminum nitride (AlN) sacrificial layer is mounted on a trapezoid-shaped patterned sapphire substrate. GaN epitaxial growth is observed on the AlN sacrificial layer. The basic physical properties of

We fabricated an air-tunnel structure between a gallium nitride (GaN) layer and trapezoid-patterned sapphire substrate (TPSS) through the in situ carbonization of a photoresist layer to enable rapid chemical lift-off (CLO). A trapezoid-shaped PSS was used, which is advantageous for epitaxial growth on the upper c-plane when forming an air tunnel between the substrate and GaN layer. The upper c-plane of the TPSS was exposed during carbonization. This was followed by selective GaN epitaxial latera