정동근 교수

A p+-AlGaAs/n+-GaInP heterojunction tunnel diode with band gap Eg≊1.9 eV was fabricated by the atomic layer epitaxy growth. Doping levels of 1×1020 cm−3 and 5×1019 cm−3 were achieved in the p and n side of the diode using carbon and selenium, respectively. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. For forward current of 20 A/cm2, which is the expected current density at 1000 suns operation, there is only ∼20 mV voltage

Properties of low dielectric constant, plasma polymerized decahydronaphthalene (PPDHN) thin films deposited by plasma enhanced (PE) CVD were investigated. Plasma power significantly affected the dielectric constants and thermal stability of the deposited films. As plasma power was increased from 30 W to 90 W, the relative dielectric constant, k, of the deposited PPDHN thin films increased from 2.65 to 3.12. With the increase in plasma power, integrated peak areas of CO stretching (∼1700 cm−1) a

Plasma surface modification is an effective method for changing material properties to control cell behavior on a surface. This study investigates the efficiency of a plasma polymerized 4,7,10-trioxa-1,13-tridecanediamine (ppTTDDA) film coated on a polystyrene (PS) Petri dish, which is a biocompatible surface with carbon- and oxygen-based chemical species. The adhesion, proliferation, and migration properties of bovine aortic endothelial cells (BAECs) were profoundly enhanced in the ppTTDDA-coat

Encrustation and/or biofilm formation in ureteral stents are major causes of obstruction and reduce the lifetime of a ureteral stent. In this study, the inner surfaces of polyurethane (PU) tubes (inner and outer diameters of 1.2 and 2.0 mm, respectively) were reformed with Ar, O₂, and C₂H₂ gases using specialized plasma-enhanced chemical vapor deposition techniques for the first time. Then, the modified PU tubes were immersed in urine for 15 days, and the charact