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The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The

We have fabricated transparent bottom gate thin film transistors (TFTs) using Al-doped zinc tin oxide (AZTO) as active layers. The AZTO active layer was deposited by rf magnetron sputtering at room temperature. The AZTO TFT showed good TFT performance without postannealing. The field effect mobility and the subthreshold swing were improved by postannealing below 180 °C. The AZTO TFT exhibited a field effect mobility (μFET) of 10.1 cm2/V s, a turn-on voltage (Von) of 0.4 V, a subthreshold swing (

Abstract Domain walls in interacting electronic systems can have distinct localized states, which often govern physical properties and may lead to unprecedented functionalities and novel devices. However, electronic states within domain walls themselves have not been clearly identified and understood for strongly correlated electron systems. Here, we resolve the electronic states localized on domain walls in a Mott-charge-density-wave insulator 1 T -TaS 2 using scanning tunneling spectroscopy. W

We investigate the interplay of the electron-electron and electron-phonon interactions in the electronic structure of an exotic insulating state in the layered dichalcogenide $1T\text{\ensuremath{-}}{\mathrm{TaS}}_{2}$, where the charge-density-wave (CDW) order coexists with a Mott correlation gap. Scanning tunneling microscopy and spectroscopy measurements with high spatial and energy resolution determine unambiguously the CDW and the Mott gap as 0.20--0.24 eV and 0.32 eV, respectively, through

Abstract We have fabricated the transparent bottom gate TFTs using Al and Sn‐doped zinc indium oxide (AT‐ZIO) as an active layer. The AT‐ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT‐ZIO TFT showed a field effect mobility of 15.6 cm 2 /Vs even before annealing. The mobility increased with increasing In 2 O 3 content and post‐annealing temperature. The AT‐ZIO TFT exhibited afield effect mobility of 33 cm 2 /Vs, a sub‐threshold swing of 0.08 V/dec, and an on

We developed a highly refractive index planarization layer showing a very smooth surface for organic light-emitting diode (OLED) light extraction, and we successfully prepared a highly efficient white OLED device with an embossed nano-structure and highly refractive index planarization layers. White OLEDs act as an internal out-coupling layer. We used a spin-coating method and two types of TiO2 solutions for a planarization of the embossed nano-structure on a glass substrate. The first TiO2 solu

Photochemical hole burning (PHB) not only can be applied for data storage systems but also serves as a powerful method for studying the local structure around optical centers. The present work investigated the effects of aluminum, magnesium, and silicon ions on hole burning and the phonon sideband for borate glasses that exhibit PHB at room temperature. Hole burning was measured for the 5 D 0−7 F 0 transition of Sm 2+ and the phonon sideband spectrum for the 5 D 0 ‐ 7 F 0 transition of Eu 3+ . T

We have fabricated the transparent bottom gate thin-film transistors (TFTs) using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and the AT-ZIO TFT showed a field effect mobility of 15.6 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs even before annealing. The mobility increased with increasing the In <sub xmlns:mml="http://www.w3.or

We examined the light diffusing effects of nano and micro-structures on microcavity designed OLEDs. The results of FDTD simulations and experiments showed that the pillar shaped nano-structure was more effective than the concave micro-structure for light diffusing of microcavity OLEDs. The sharp luminance distribution of the microcavity OLED was changed to near Lambertian luminance distribution by the nano-structure, and light diffusing effects increased with the height of the nano-structure. Fu

Abstract Surface reconstruction plays a vital role in determining the surface electronic structure and chemistry of semiconductors and metal oxides. However, it has been commonly believed that surface reconstruction does not occur in van der Waals layered materials, as they do not undergo significant bond breaking during surface formation. In this study, we present evidence that charge density wave (CDW) order in these materials can, in fact, cause CDW surface reconstruction through interlayer c

Abstract Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the stacking characteristics of bulk 1 T ‐TaS 2 are analyzed using scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. It is observed that Mott‐insulating domains undergo a transition to band‐insulating domains restoring

Abstract Transparent top‐gate Al‐Zn‐Sn‐O (AZTO) thin‐film transistors (TFTs) with an Al2O3 protective layer (PL) on an active layer were studied, and a transparent 2.5‐inch QCIF+AMOLED (active‐matrix organic light‐emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic‐layer deposition (ALD) processes. The mobility and subthreshold slope were

Abstract We have examined post‐annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co‐planar structure. The oxygen‐vacuum two step annealing enhanced the field effect mobility up to 18 cm 2 /Vs and the sub‐threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post‐annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga 2 O 3 , Al 2 O 3 , SiO 2 and some