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Carbon nanotubes (CNTs), either single wall carbon nanotubes (SWNTs) or multiwall carbon nanotubes (MWNTs), can improve the thermoelectric properties of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT : PSS), but it requires addition of 30-40 wt% CNTs. We report that the figure of merit (ZT) value of PEDOT : PSS thin film for thermoelectric property is increased about 10 times by incorporating 2 wt% of graphene. PEDOT : PSS thin films containing 1, 2, 3 wt% graphene are prepared b

Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky

Abstract Molybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge trap

Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact resistance at the metal-TMDC interface plagues the realization of high-performance devices. Here, an effective metal-interlayer-semiconductor (MIS) contact is demonstrated, wherein an ultrathin ZnO interlayer is inserted between the metal electrode and MoS₂, providing damage-free and clean i

An ambipolar dual-channel field-effect transistor (FET) with a WSe₂ /MoS₂ heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS₂ and WSe₂ , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe₂ /MoS₂ dual-channel FET.

Abstract Transition metal dichalcogenides (TMDs) are of great interest owing to their unique properties. However, TMD materials face two major challenges that limit their practical applications: contact resistance and surface contamination. Herein, a strategy to overcome these problems by inserting a monolayer of hexagonal boron nitride (h‐BN) at the chromium (Cr) and tungsten disulfide (WS 2 ) interface is introduced. Electrical behaviors of direct metal–semiconductor (MS) and metal–insulator–s

Alternating current dielectrophoresis (DEP) is an excellent technique to assemble nanoscale materials. For efficient DEP, the optimization of the key parameters like peak-to-peak voltage, applied frequency, and processing time is required for good device. In this work, we have assembled graphene oxide (GO) nanostructures mixed with platinum (Pt) nanoparticles between the micro gap electrodes for a proficient hydrogen gas sensors. The Pt-decorated GO nanostructures were well located between a pai

HfSe₂ field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe₂ field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 10⁵, a field effect mobility increase from 2.16 to 3.04 cm² V^-1 s^-1, a subthreshold swing improvement from 30.6 to 4.8 V

Through tin precursor chemistry, SnSe nanocrystals were phase-selectively prepared. Monomeric N-heterocyclic stannylene, [Me 2 Si(N t Bu) 2 Sn:], having lone pair electrons, was prepared by a literature method, and it had a direct reactivity toward selenium powder. The resultant dimerized compound with a 1:1 stoichiometric ratio of Sn to Se was used as a precursor to synthesize tin selenides. Thermolysis of the precursor solution in oleylamine resulted in SnSe plates. The oriented attachment of