김규홍 교수

The extensive design effort for KSTAR has been focused on two major aspects of the KSTAR project mission - steady-state-operation capability and advanced tokamak physics. The steady state aspect of the mission is reflected in the choice of superconducting magnets, provision of actively cooled in-vessel components, and long pulse current drive and heating systems. The advanced tokamak aspect of the mission is incorporated in the design features associated with flexible plasma shaping, double null

We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.

Increasing demands on high-data-rate and low-latency cellular communications are accelerating the developments of millimeter-wave (mm-wave) systems for 5G NR in 28 and 39GHz bands. In order to provide the 5G communication systems worldwide, high-performance and low-cost RF chipset solutions are required. Recently, 5G mm-wave CMOS/BiCMOS RF phased-array transceivers for the 28GHz band have been reported [1]–[5]. However, there are very limited reports for the 39GHz band [6], which is one of the m

A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate. A 0.053um² SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various self-aligned processes have been developed with 193i lithography to overcome optical pa

For the first time, 512 Mb DRAMs using a Recess-Channel-Array-Transistor(RCAT) are successfully developed with 88 nm feature size, which is the smallest feature size ever reported in DRAM technology with non-planar array transistor. The RCAT with gate length of 75 nm and recessed channel depth of 150 nm exhibits drastically improved electrical characteristics such as DIBL, BV/sub DS/, junction leakage and cell contact resistance, comparing to a conventional planar array transistor of the same ga

OBJECTIVE: The decision to adopt a conservative or surgical modality for a relatively small volume of spontaneous intracerebral hemorrhage (SICH) is difficult and often controversial, especially when consciousness is tolerable. The authors examined the results of stereotactic-guided evacuation of SICH for relatively small volumes with respect to functional outcome. METHODS: This prospective study was performed on 387 patients with SICH who underwent stereotactic-guided evacuation (n = 204, group

OBJECT: The aim of this study was to evaluate the role of certain cell-cycle regulatory proteins in the recurrence of atypical meningiomas. These proteins were analyzed with immunohistochemical staining to identify predisposing factors for the recurrence of atypical meningiomas. METHODS: The authors retrospectively reviewed the medical records of patients with atypical meningiomas diagnosed in the period from January 2000 to June 2012 at the Department of Neurosurgery at Samsung Changwon Hospita

Amorphous Ge2Sb2Te5 (a-GST) film, 100nm thick, was grown by cosputtering from GeTe and Sb2Te3 targets on a silicon wafer at room temperature. The native oxidized layer, which was formed in air and about 20nm thick measured by secondary ion mass spectroscopy, was removed by Ne+ ion sputtering for 1h with 0.6kV beam energy. Core-level spectra of the Te 3d and 4d, Sb 3d and 4d, and Ge 3d of the oxygen-free a-GST were obtained by high-resolution x-ray photoelectron spectroscopy with synchrotron radi

There have been concerns about how far we can extend the so far so successful conventional semiconductor memories Such as DRAM, SRAM and Flash memory and what will be the future directions of memory development. In this article, we will review the key technical limits of conventional memory scaling and the directions to overcome the problem. In addition, we will review the technical challenges and opportunities of emerging. new memories such as ferroelectric RAM (FRAM), magnetic RAM (MRAM) and p

Objective : The purpose of this study was to investigate the reliable factors influencing the surgical outcome of the patients with traumatic acute subdural hematoma (ASDH) and to improve the functional outcome of these patients. Methods : A total of 256 consecutive patients who underwent surgical intervention for traumatic ASDH between March 1998 and March 2008 were reviewed. We evaluated the influence of perioperative variables on functional recovery and mortality using multivariate logistic r

Objective : The purpose of this study was to identify independent predictors of mortality and functional recovery in patients with primary intracerebral hemorrhage (PICH) and to improve functional outcome in these patients. Methods : Data were collected retrospectively on 585 patients with supratentorial PICH admitted to the Stroke Unit at our hospital between 1st January 2004 and the 31st July 2008. Using multivariate logistic regression analysis, the associations between all selected variables