Skip to main content

양희준 교수

Heejun Yang

KAIST 물리학과 · 재료과학

연구실 소개

양희준 교수의 연구실은 2차원 물질 기반의 나노소재와 신소재를 활용한 고성능 전자소자 및 뉴로모픽 컴퓨팅 기술을 연구하고 있습니다. 특히, 이질적 2차원 물질의 안정적 접합 구조 설계와 레이저 유도 다형성 공학을 통해 고이동도 트랜지스터를 실현하며, 이를 기반으로 한 인공지능 기반의 센서 내 연산(인센서 리저보아르 컴퓨팅)과 에너지 효율적인 메모리 소자 개발에 주력하고 있습니다. 또한, 전자적 특성 제어를 통한 생체 신경 기반의 합성 시냅스 소자 및 고효율 수소 발생 촉매 설계도 핵심 연구 분야입니다.

2차원 물질뉴로모픽 소자인센서 컴퓨팅고이동도 트랜지스터에너지 효율 메모리

연구 현황

논문 수
178
총 인용 수
7,739
최근 5년 논문
81
주요 분야
재료과학

연구 성과 추이

표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.

5개년 연도별 논문 게재 수
81총합
2021
2022
2023
2024
2025
5개년 연도별 피인용 수
1,434총합
20212022202320242025

주요 논문

15
1
논문|인용수 1,162·2015
Phase patterning for ohmic homojunction contact in MoTe 2
Suyeon Cho, Sera Kim, Sera Kim, Jung Ho Kim, Jiong Zhao, Jinbong Seok, Dong Hoon Keum, Jaeyoon Baik, Duk‐Hyun Choe, K. J. Chang, Kazu Suenaga, Sung Wng Kim
SJR Q1Science

Artificial van der Waals heterostructures with two-dimensional (2D) atomic crystals are promising as an active channel or as a buffer contact layer for next-generation devices. However, genuine 2D heterostructure devices remain limited because of impurity-involved transfer process and metastable and inhomogeneous heterostructure formation. We used laser-induced phase patterning, a polymorph engineering, to fabricate an ohmic heterophase homojunction between semiconducting hexagonal (2H) and meta

Materials ChemistryMaterials Science
2
논문|인용수 1,021·2015
Bandgap opening in few-layered monoclinic MoTe2
Dong Hoon Keum, Suyeon Cho, Jung Ho Kim, Duk‐Hyun Choe, Ha-Jun Sung, Min Kan, Haeyong Kang, Jae‐Yeol Hwang, Sung Wng Kim, Heejun Yang, K. J. Chang, Young Hee Lee
SJR Q1Nature Physics
Materials ChemistryMaterials Science
3
논문|인용수 953·2012
Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
Heejun Yang, Jinseong Heo, Seongjun Park, Hyun Jae Song, David H. Seo, Kyung‐Eun Byun, Philip Kim, In-Kyeong Yoo, Hyun‐Jong Chung, Kinam Kim
SJR Q1Science

Despite several years of research into graphene electronics, sufficient on/off current ratio I(on)/I(off) in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier "barristor" (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the gate voltage to control the

Materials ChemistryMaterials Science
4
논문|인용수 421·2021
In-sensor reservoir computing for language learning via two-dimensional memristors
Linfeng Sun, Zhongrui Wang, Jinbao Jiang, Yeji Kim, Bomin Joo, Shoujun Zheng, Seungyeon Lee, Woo Jong Yu, Bai‐Sun Kong, Heejun Yang
SJR Q1Science AdvancesOA

The dynamic processing of optoelectronic signals carrying temporal and sequential information is critical to various machine learning applications including language processing and computer vision. Despite extensive efforts to emulate the visual cortex of human brain, large energy/time overhead and extra hardware costs are incurred by the physically separated sensing, memory, and processing units. The challenge is further intensified by the tedious training of conventional recurrent neural netwo

Electrical and Electronic EngineeringEngineering
5
논문|인용수 387·2017
Structural and quantum-state phase transitions in van der Waals layered materials
Heejun Yang, Sung Wng Kim, Manish Chhowalla, Young Hee Lee
SJR Q1Nature Physics
Materials ChemistryMaterials Science
6
논문|인용수 247·2019
Self-selective van der Waals heterostructures for large scale memory array
Linfeng Sun, Yishu Zhang, Gyeongtak Han, Geunwoo Hwang, Jinbao Jiang, Bomin Joo, Kenji Watanabe, Takashi Taniguchi, Young‐Min Kim, Woo Jong Yu, Bai‐Sun Kong, Rong Zhao
SJR Q1Nature CommunicationsOA

Abstract The large-scale crossbar array is a promising architecture for hardware-amenable energy efficient three-dimensional memory and neuromorphic computing systems. While accessing a memory cell with negligible sneak currents remains a fundamental issue in the crossbar array architecture, up-to-date memory cells for large-scale crossbar arrays suffer from process and device integration (one selector one resistor) or destructive read operation (complementary resistive switching). Here, we intr

Electrical and Electronic EngineeringEngineering
7
논문|인용수 174·2018
Synaptic Computation Enabled by Joule Heating of Single-Layered Semiconductors for Sound Localization
Linfeng Sun, Yishu Zhang, Geunwoo Hwang, Jinbao Jiang, Dohyun Kim, Yonas Assefa Eshete, Rong Zhao, Heejun Yang
SJR Q1Nano Letters

Synaptic computation, which is vital for information processing and decision making in neural networks, has remained technically challenging to be demonstrated without using numerous transistors and capacitors, though significant efforts have been made to emulate the biological synaptic transmission such as short-term and long-term plasticity and memory. Here, we report synaptic computation based on Joule heating and versatile doping induced metal-insulator transition in a scalable monolayer-mol

Electrical and Electronic EngineeringEngineering
8
논문|인용수 125·2017
Active hydrogen evolution through lattice distortion in metallic MoTe 2
Jinbong Seok, Junho Lee, Suyeon Cho, Byungdo Ji, Hyo Won Kim, Min Hee Kwon, Dohyun Kim, Young‐Min Kim, Sang Ho Oh, Sung Wng Kim, Young Hee Lee, Young-Woo Son
SJR Q12D MaterialsOA

Engineering surface atoms of transition metal dichalcogenides (TMDs) is a promising way to design catalysts for efficient electrochemical reactions including the hydrogen evolution reaction (HER). However, materials processing based on TMDs, such as vacancy creation or edge exposure, for active HER, has resulted in insufficient atomic-precision lattice homogeneity and a lack of clear understanding of HER over 2D materials. Here, we report a durable and effective HER at atomically defined reactio

Renewable Energy, Sustainability and the EnvironmentEnergy
9
논문|인용수 111·2010
Quantum Interference Channeling at Graphene Edges
Heejun Yang, Andrew J. Mayne, Mohamed Seghir Boucherit, G. Comtet, Gérald Dujardin, Young Kuk
SJR Q1Nano LettersOA

Electron scattering at graphene edges is expected to make a crucial contribution to the electron transport in graphene nanodevices by producing quantum interferences. Atomic-scale scanning tunneling microscopy (STM) topographies of different edge structures of monolayer graphene show that the localization of the electronic density of states along the C-C bonds, a property unique to monolayer graphene, results in quantum interference patterns along the graphene carbon bond network, whose shapes d

Materials ChemistryMaterials Science
10
논문|인용수 97·2017
Long-Range Lattice Engineering of MoTe2 by a 2D Electride
Sera Kim, Seunghyun Song, Jongho Park, Ho Sung Yu, Suyeon Cho, Dohyun Kim, Jaeyoon Baik, Duk‐Hyun Choe, K. J. Chang, Young Hee Lee, Sung Wng Kim, Heejun Yang
SJR Q1Nano Letters

Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to ∼1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca 2 N] + ·e – to MoTe 2 over a distanc

Materials ChemistryMaterials Science
11
리뷰|인용수 93·2023
Phase Engineering of 2D Materials
Do‐Hyun Kim, Juhi Pandey, Juyeong Jeong, Woohyun Cho, Seung-yeon Lee, Suyeon Cho, Heejun Yang
SJR Q1Chemical Reviews

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes

Materials ChemistryMaterials Science
12
논문|인용수 89·2020
Recent Progress in Synaptic Devices Based on 2D Materials
Linfeng Sun, Wei Wang, Heejun Yang
SJR Q1Advanced Intelligent SystemsOA

Diverse synaptic plasticity with a wide range of timescales in biological synapses plays an important role in memory, learning, and various signal processing with exceptionally low power consumption. Emulating biological synaptic functions by electric devices for neuromorphic computation has been considered as a way to overcome the traditional von Neumann architecture in which separated memory and information processing units require high power consumption for their functions. Synaptic devices a

Electrical and Electronic EngineeringEngineering
13
논문|인용수 76·2020
Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications
Linfeng Sun, Genuwoo Hwang, Wooseon Choi, Gyeongtak Han, Yishu Zhang, Jinbao Jiang, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Mali Zhao, Rong Zhao, Young‐Min Kim
SJR Q1Nano Energy
Electrical and Electronic EngineeringEngineering
14
논문|인용수 53·2019
Vertical Heterophase for Electrical, Electrochemical, and Mechanical Manipulations of Layered MoTe2
Yonas Assefa Eshete, Ning Ling, Sera Kim, Dohyun Kim, Geunwoo Hwang, Suyeon Cho, Heejun Yang
SJR Q1Advanced Functional Materials

Abstract Phase engineering is a breakthrough for various electronic and energy device applications with transition metal dichalcogenides (TMDs). Chemical methods, such as lithium intercalation, are mostly used for phase engineering, which achieves atomically thin flakes and high catalytic performances in several group 6 TMDs including MoS 2 . However, chemical methods cannot be applied to MoTe 2 , a widely investigated group 6 TMD with intriguing semiconducting, topological, and catalytic proper

Materials ChemistryMaterials Science
15
논문|인용수 49·2019
Atomic-scale symmetry breaking for out-of-plane piezoelectricity in two-dimensional transition metal dichalcogenides
Seunghun Kang, Sera Kim, Sera Jeon, Woo‐Sung Jang, Daehee Seol, Young‐Min Kim, Young-Min Kim, Jaekwang Lee, Heejun Yang, Yunseok Kim, Yunseok Kim
SJR Q1Nano Energy
Materials ChemistryMaterials Science

대표 연구 분야

Materials ChemistryElectrical and Electronic EngineeringAtomic and Molecular Physics, and OpticsRenewable Energy, Sustainability and the EnvironmentBiomedical EngineeringMechanical Engineering

양희준 교수의 연구를 Nubint에서 더 깊이 살펴보세요

이 연구실의 논문을 앱에서 열어 AI와 함께 읽고, 핵심을 요약하고, 내 글에 인용하세요.