유호천 교수

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is

Abstract Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H‐TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H‐TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage ( V OUT ) does not fully swing from V DD to G ND . A new H‐TR device structure that consists of a dinaphtho[2,3‐

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suit

Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this

New materials and device approaches to multi-valued logic systems are introduced.

A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing transfer curves without apparent NTC can be accomplished through programming operation. Based on the H-MTR, a binary/ternary reconfigurable logic inverter (R-i

Abstract Multilevel metal interconnects are crucial for the development of large-scale organic integrated circuits. In particular, three-dimensional integrated circuits require a large number of vertical interconnects between layers. Here, we present a novel multilevel metal interconnect scheme that involves solvent-free patterning of insulator layers to form an interconnecting area that ensures a reliable electrical connection between two metals in different layers. Using a highly reliable inte

Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright

Flexible electronic devices require metal interconnects to facilitate the flow of electrical signals among the device components, ensuring its proper functionality. There are multiple factors to consider when designing metal interconnects for flexible electronics, including their conductivity, flexibility, reliability, and cost. This article provides an overview of recent endeavors to create flexible electronic devices through different metal interconnect approaches, with a focus on materials an

Metal oxide semiconductors are of great interest for enabling advanced photodetectors. However, operational instability and the absence of an appropriate doping technique hinder practical development and commercialization. Here, a strategy is proposed to dramatically increase the conventional photodetection performance, having superior stability in operational and environmental atmospheres. By performing energy-band engineering through an octadecylphosphonic acid (ODPA) self-assembled-monolayer-

Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecularly thin nature. In addition to the contribution of SAMs as gate dielectric layers, SAMs contribute to the transistor as a semiconducting active layer. Beyond the transistor components, SAMs have recen

Organic semiconductors have great potential to revolutionize electronics by enabling flexible and eco-friendly manufacturing of electronic devices on plastic film substrates. Recent research and development led to the creation of printed displays, radio-frequency identification tags, smart labels, and sensors based on organic electronics. Over the last 3 decades, significant progress has been made in realizing electronic devices with unprecedented features, such as wearable sensors, disposable e

Organic multi-valued logic (MVL) circuits can substantially improve the data processing efficiency in highly advanced wearable electronics. Organic ternary logic circuits can be implemented by utilizing the negative transconductance (NTC) of heterojunction transistors (H-TRs). To achieve high-performance organic ternary logic circuits, the range of NTC in H-TRs must be optimized in advance to ensure the well-defined intermediate logic state in ternary logic inverters (T-inverters). Herein, a sim

Here, a highly crystalline and self‐assembled 6,13‐bis(triisopropylsilylethynyl) pentacene (TIPS‐Pentacene) thin films formed by simple spin‐coating for the fabrication of high‐performance solution‐processed organic field‐effect transistors (OFETs) are reported. Rather than using semiconducting organic small‐molecule–insulating polymer blends for an active layer of an organic transistor, TIPS‐Pentacene organic semiconductor is separately self‐assembled on partially crosslinked poly‐4‐vinylphenol

Hysteresis in organic field-effect transistors is attributed to the well-known bias stress effects. This is a phenomenon in which the measured drain-source current varies when sweeping the gate voltage from on to off or from off to on. Hysteresis is caused by various factors, and one of the most common is charge trapping. A charge trap is a defect that occurs in an interface state or part of a semiconductor, and it refers to an electronic state that appears distributed in the semiconductor's ene